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Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis

Usachov, D.; Adamchuk, V. K.; Haberer, D.; Grueneis, A.; Sachdev, H.; Preobrajenski, Alexei LU ; Laubschat, C. and Vyalikh, D. V. (2010) In Physical Review B (Condensed Matter and Materials Physics) 82(7).
Abstract
We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (h-BN) from tight chemical bonding to a Ni(111) thin film grown on a W(110) substrate can be achieved by intercalation of Au atoms into the interface. This process has been systematically investigated using angle-resolved photoemission spectroscopy, x-ray photoemission, and absorption techniques. It has been demonstrated that the transition of the h-BN layer from the "rigid" into the "quasifreestanding" state is accompanied by a change in its lattice constant. Using chemical vapor deposition, graphene has been successfully synthesized on the insulating, quasifreestanding h-BN monolayer. We anticipate that the in situ synthesized weakly interacting... (More)
We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (h-BN) from tight chemical bonding to a Ni(111) thin film grown on a W(110) substrate can be achieved by intercalation of Au atoms into the interface. This process has been systematically investigated using angle-resolved photoemission spectroscopy, x-ray photoemission, and absorption techniques. It has been demonstrated that the transition of the h-BN layer from the "rigid" into the "quasifreestanding" state is accompanied by a change in its lattice constant. Using chemical vapor deposition, graphene has been successfully synthesized on the insulating, quasifreestanding h-BN monolayer. We anticipate that the in situ synthesized weakly interacting graphene/h-BN double layered system could be further developed for technological applications and may provide perspectives for further inquiry into the unusual electronic properties of graphene. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
82
issue
7
publisher
American Physical Society
external identifiers
  • wos:000280963100006
  • scopus:77957566181
ISSN
1098-0121
DOI
10.1103/PhysRevB.82.075415
language
English
LU publication?
yes
id
bde6e8dd-1e0e-49ef-aeca-233de69a92fb (old id 1673596)
date added to LUP
2010-09-23 10:41:13
date last changed
2018-07-01 03:59:12
@article{bde6e8dd-1e0e-49ef-aeca-233de69a92fb,
  abstract     = {We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (h-BN) from tight chemical bonding to a Ni(111) thin film grown on a W(110) substrate can be achieved by intercalation of Au atoms into the interface. This process has been systematically investigated using angle-resolved photoemission spectroscopy, x-ray photoemission, and absorption techniques. It has been demonstrated that the transition of the h-BN layer from the "rigid" into the "quasifreestanding" state is accompanied by a change in its lattice constant. Using chemical vapor deposition, graphene has been successfully synthesized on the insulating, quasifreestanding h-BN monolayer. We anticipate that the in situ synthesized weakly interacting graphene/h-BN double layered system could be further developed for technological applications and may provide perspectives for further inquiry into the unusual electronic properties of graphene.},
  articleno    = {075415},
  author       = {Usachov, D. and Adamchuk, V. K. and Haberer, D. and Grueneis, A. and Sachdev, H. and Preobrajenski, Alexei and Laubschat, C. and Vyalikh, D. V.},
  issn         = {1098-0121},
  language     = {eng},
  number       = {7},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis},
  url          = {http://dx.doi.org/10.1103/PhysRevB.82.075415},
  volume       = {82},
  year         = {2010},
}