Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis
(2010) In Physical Review B (Condensed Matter and Materials Physics) 82(7).- Abstract
- We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (h-BN) from tight chemical bonding to a Ni(111) thin film grown on a W(110) substrate can be achieved by intercalation of Au atoms into the interface. This process has been systematically investigated using angle-resolved photoemission spectroscopy, x-ray photoemission, and absorption techniques. It has been demonstrated that the transition of the h-BN layer from the "rigid" into the "quasifreestanding" state is accompanied by a change in its lattice constant. Using chemical vapor deposition, graphene has been successfully synthesized on the insulating, quasifreestanding h-BN monolayer. We anticipate that the in situ synthesized weakly interacting... (More)
- We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (h-BN) from tight chemical bonding to a Ni(111) thin film grown on a W(110) substrate can be achieved by intercalation of Au atoms into the interface. This process has been systematically investigated using angle-resolved photoemission spectroscopy, x-ray photoemission, and absorption techniques. It has been demonstrated that the transition of the h-BN layer from the "rigid" into the "quasifreestanding" state is accompanied by a change in its lattice constant. Using chemical vapor deposition, graphene has been successfully synthesized on the insulating, quasifreestanding h-BN monolayer. We anticipate that the in situ synthesized weakly interacting graphene/h-BN double layered system could be further developed for technological applications and may provide perspectives for further inquiry into the unusual electronic properties of graphene. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1673596
- author
- Usachov, D. ; Adamchuk, V. K. ; Haberer, D. ; Grueneis, A. ; Sachdev, H. ; Preobrajenski, Alexei LU ; Laubschat, C. and Vyalikh, D. V.
- organization
- publishing date
- 2010
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 82
- issue
- 7
- article number
- 075415
- publisher
- American Physical Society
- external identifiers
-
- wos:000280963100006
- scopus:77957566181
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.82.075415
- language
- English
- LU publication?
- yes
- id
- bde6e8dd-1e0e-49ef-aeca-233de69a92fb (old id 1673596)
- date added to LUP
- 2016-04-01 14:18:18
- date last changed
- 2025-04-04 15:00:08
@article{bde6e8dd-1e0e-49ef-aeca-233de69a92fb,
abstract = {{We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (h-BN) from tight chemical bonding to a Ni(111) thin film grown on a W(110) substrate can be achieved by intercalation of Au atoms into the interface. This process has been systematically investigated using angle-resolved photoemission spectroscopy, x-ray photoemission, and absorption techniques. It has been demonstrated that the transition of the h-BN layer from the "rigid" into the "quasifreestanding" state is accompanied by a change in its lattice constant. Using chemical vapor deposition, graphene has been successfully synthesized on the insulating, quasifreestanding h-BN monolayer. We anticipate that the in situ synthesized weakly interacting graphene/h-BN double layered system could be further developed for technological applications and may provide perspectives for further inquiry into the unusual electronic properties of graphene.}},
author = {{Usachov, D. and Adamchuk, V. K. and Haberer, D. and Grueneis, A. and Sachdev, H. and Preobrajenski, Alexei and Laubschat, C. and Vyalikh, D. V.}},
issn = {{1098-0121}},
language = {{eng}},
number = {{7}},
publisher = {{American Physical Society}},
series = {{Physical Review B (Condensed Matter and Materials Physics)}},
title = {{Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis}},
url = {{http://dx.doi.org/10.1103/PhysRevB.82.075415}},
doi = {{10.1103/PhysRevB.82.075415}},
volume = {{82}},
year = {{2010}},
}