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Characterization and optimization of the laser-produced plasma EUV source at 13.5 nm based on a double-stream Xe/He gas puff target

Rakowski, Rafal LU ; Bartnik, A. ; Fiedorowicz, H. ; de Dortan, F. de Gaufridy ; Jarocki, R. ; Kostecki, J. ; Mikolajczyk, J. ; Ryc, L. ; Szczurek, M. and Wachulak, P. (2010) In Applied Physics B 101(4). p.773-789
Abstract
The paper describes a debris-free, efficient laser-produced plasma source emitting EUV radiation. The source is based on a double-stream Xe/He gas-puff. Its properties and spectroscopic signatures are characterized and discussed. The spatio-spectral features of the EUV emission are investigated. We show a large body of results related to the intensity and brightness of the EUV emission, its spatial, temporal, and angular behavior and the effect of the repetition rate as well. A conversion efficiency of laser energy into EUV in-band energy at 13.5 nm of 0.42% has been gained. The electron temperature and electron density of the source were estimated by means of a novel method using the FLY code. The experimental data and the Hullac code... (More)
The paper describes a debris-free, efficient laser-produced plasma source emitting EUV radiation. The source is based on a double-stream Xe/He gas-puff. Its properties and spectroscopic signatures are characterized and discussed. The spatio-spectral features of the EUV emission are investigated. We show a large body of results related to the intensity and brightness of the EUV emission, its spatial, temporal, and angular behavior and the effect of the repetition rate as well. A conversion efficiency of laser energy into EUV in-band energy at 13.5 nm of 0.42% has been gained. The electron temperature and electron density of the source were estimated by means of a novel method using the FLY code. The experimental data and the Hullac code calculations are compared and discussed. The source is well suited for EUV metrology purposes. The potential of the source for application in EUV lithography was earlier demonstrated in the optical characterization of Mo/Si multi-layer mirrors and photo-etching of polymers. (Less)
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics B
volume
101
issue
4
pages
773 - 789
publisher
Springer
external identifiers
  • wos:000284771400010
  • scopus:78650168713
ISSN
0946-2171
DOI
10.1007/s00340-010-4327-9
language
English
LU publication?
yes
id
c90cc02f-0fc9-4dae-a3cb-0446baab4e70 (old id 1773808)
date added to LUP
2016-04-01 10:51:57
date last changed
2025-04-04 14:51:33
@article{c90cc02f-0fc9-4dae-a3cb-0446baab4e70,
  abstract     = {{The paper describes a debris-free, efficient laser-produced plasma source emitting EUV radiation. The source is based on a double-stream Xe/He gas-puff. Its properties and spectroscopic signatures are characterized and discussed. The spatio-spectral features of the EUV emission are investigated. We show a large body of results related to the intensity and brightness of the EUV emission, its spatial, temporal, and angular behavior and the effect of the repetition rate as well. A conversion efficiency of laser energy into EUV in-band energy at 13.5 nm of 0.42% has been gained. The electron temperature and electron density of the source were estimated by means of a novel method using the FLY code. The experimental data and the Hullac code calculations are compared and discussed. The source is well suited for EUV metrology purposes. The potential of the source for application in EUV lithography was earlier demonstrated in the optical characterization of Mo/Si multi-layer mirrors and photo-etching of polymers.}},
  author       = {{Rakowski, Rafal and Bartnik, A. and Fiedorowicz, H. and de Dortan, F. de Gaufridy and Jarocki, R. and Kostecki, J. and Mikolajczyk, J. and Ryc, L. and Szczurek, M. and Wachulak, P.}},
  issn         = {{0946-2171}},
  language     = {{eng}},
  number       = {{4}},
  pages        = {{773--789}},
  publisher    = {{Springer}},
  series       = {{Applied Physics B}},
  title        = {{Characterization and optimization of the laser-produced plasma EUV source at 13.5 nm based on a double-stream Xe/He gas puff target}},
  url          = {{http://dx.doi.org/10.1007/s00340-010-4327-9}},
  doi          = {{10.1007/s00340-010-4327-9}},
  volume       = {{101}},
  year         = {{2010}},
}