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Nonlinear electrical properties of Si three-terminal junction devices

Meng, Fantao; Sun, Jie LU ; Graczyk, Mariusz LU ; Zhang, Kailiang; Prunnila, Mika; Ahopelto, Jouni; Shi, Peixiong; Chu, Jinkui; Maximov, Ivan LU and Xu, Hongqi LU (2010) In Applied Physics Letters 97(24).
Abstract
This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics. (C) 2010 American Institute of Physics. [doi:10.1063/1.3526725]
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
97
issue
24
publisher
American Institute of Physics
external identifiers
  • wos:000285481000031
  • scopus:78650376760
ISSN
0003-6951
DOI
10.1063/1.3526725
language
English
LU publication?
yes
id
0ab4acf6-d38f-49f9-bda3-121030efbb9a (old id 1831254)
date added to LUP
2011-03-02 10:40:15
date last changed
2018-05-29 11:38:17
@article{0ab4acf6-d38f-49f9-bda3-121030efbb9a,
  abstract     = {This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics. (C) 2010 American Institute of Physics. [doi:10.1063/1.3526725]},
  articleno    = {242106},
  author       = {Meng, Fantao and Sun, Jie and Graczyk, Mariusz and Zhang, Kailiang and Prunnila, Mika and Ahopelto, Jouni and Shi, Peixiong and Chu, Jinkui and Maximov, Ivan and Xu, Hongqi},
  issn         = {0003-6951},
  language     = {eng},
  number       = {24},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Nonlinear electrical properties of Si three-terminal junction devices},
  url          = {http://dx.doi.org/10.1063/1.3526725},
  volume       = {97},
  year         = {2010},
}