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Growth of large area monolayer graphene on 3C-SiC and a comparison with other SiC polytypes

Yazdi, G. Reza ; Vasiliauskas, Remigijus ; Iakimov, Tihomir ; Zakharov, Alexei LU ; Syvajarvi, Mikael and Yakimova, Rositza (2013) In Carbon 57. p.477-484
Abstract
Epitaxial graphene growth was performed on the Si-terminated face of 4H-, 6H-, and 3C-SiC substrates by silicon sublimation from SiC in argon atmosphere at a temperature of 2000 degrees C. Graphene surface morphology, thickness and band structure have been assessed by using atomic force microscopy, low-energy electron microscopy, and angle-resolved photoemission spectroscopy, respectively. Differences in the morphology of the graphene layers on different SiC polytypes is related mainly to the minimization of the terrace surface energy during the step bunching process. The uniformity of silicon sublimation is a decisive factor for obtaining large area homogenous graphene. It is also shown that a lower substrate surface roughness results in... (More)
Epitaxial graphene growth was performed on the Si-terminated face of 4H-, 6H-, and 3C-SiC substrates by silicon sublimation from SiC in argon atmosphere at a temperature of 2000 degrees C. Graphene surface morphology, thickness and band structure have been assessed by using atomic force microscopy, low-energy electron microscopy, and angle-resolved photoemission spectroscopy, respectively. Differences in the morphology of the graphene layers on different SiC polytypes is related mainly to the minimization of the terrace surface energy during the step bunching process. The uniformity of silicon sublimation is a decisive factor for obtaining large area homogenous graphene. It is also shown that a lower substrate surface roughness results in more uniform step bunching with a lower distribution of step heights and consequently better quality of the grown graphene. Large homogeneous areas of graphene monolayers (over 50 x 50 mu m(2)) have been grown on 3C-SiC (1 1 1) substrates. The comparison with the other polytypes suggests a similarity in the surface behaviour of 3C- and 6H-SiC. (C) 2013 Elsevier Ltd. All rights reserved. (Less)
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Contribution to journal
publication status
published
subject
in
Carbon
volume
57
pages
477 - 484
publisher
Elsevier
external identifiers
  • wos:000319030000055
  • scopus:84875363736
ISSN
0008-6223
DOI
10.1016/j.carbon.2013.02.022
language
English
LU publication?
yes
id
18a19bec-fa99-4bdd-9f7b-d5d175b36711 (old id 3931432)
date added to LUP
2016-04-01 10:06:39
date last changed
2020-09-30 01:14:37
@article{18a19bec-fa99-4bdd-9f7b-d5d175b36711,
  abstract     = {Epitaxial graphene growth was performed on the Si-terminated face of 4H-, 6H-, and 3C-SiC substrates by silicon sublimation from SiC in argon atmosphere at a temperature of 2000 degrees C. Graphene surface morphology, thickness and band structure have been assessed by using atomic force microscopy, low-energy electron microscopy, and angle-resolved photoemission spectroscopy, respectively. Differences in the morphology of the graphene layers on different SiC polytypes is related mainly to the minimization of the terrace surface energy during the step bunching process. The uniformity of silicon sublimation is a decisive factor for obtaining large area homogenous graphene. It is also shown that a lower substrate surface roughness results in more uniform step bunching with a lower distribution of step heights and consequently better quality of the grown graphene. Large homogeneous areas of graphene monolayers (over 50 x 50 mu m(2)) have been grown on 3C-SiC (1 1 1) substrates. The comparison with the other polytypes suggests a similarity in the surface behaviour of 3C- and 6H-SiC. (C) 2013 Elsevier Ltd. All rights reserved.},
  author       = {Yazdi, G. Reza and Vasiliauskas, Remigijus and Iakimov, Tihomir and Zakharov, Alexei and Syvajarvi, Mikael and Yakimova, Rositza},
  issn         = {0008-6223},
  language     = {eng},
  pages        = {477--484},
  publisher    = {Elsevier},
  series       = {Carbon},
  title        = {Growth of large area monolayer graphene on 3C-SiC and a comparison with other SiC polytypes},
  url          = {http://dx.doi.org/10.1016/j.carbon.2013.02.022},
  doi          = {10.1016/j.carbon.2013.02.022},
  volume       = {57},
  year         = {2013},
}