Growth of large area monolayer graphene on 3C-SiC and a comparison with other SiC polytypes
(2013) In Carbon 57. p.477-484- Abstract
- Epitaxial graphene growth was performed on the Si-terminated face of 4H-, 6H-, and 3C-SiC substrates by silicon sublimation from SiC in argon atmosphere at a temperature of 2000 degrees C. Graphene surface morphology, thickness and band structure have been assessed by using atomic force microscopy, low-energy electron microscopy, and angle-resolved photoemission spectroscopy, respectively. Differences in the morphology of the graphene layers on different SiC polytypes is related mainly to the minimization of the terrace surface energy during the step bunching process. The uniformity of silicon sublimation is a decisive factor for obtaining large area homogenous graphene. It is also shown that a lower substrate surface roughness results in... (More)
- Epitaxial graphene growth was performed on the Si-terminated face of 4H-, 6H-, and 3C-SiC substrates by silicon sublimation from SiC in argon atmosphere at a temperature of 2000 degrees C. Graphene surface morphology, thickness and band structure have been assessed by using atomic force microscopy, low-energy electron microscopy, and angle-resolved photoemission spectroscopy, respectively. Differences in the morphology of the graphene layers on different SiC polytypes is related mainly to the minimization of the terrace surface energy during the step bunching process. The uniformity of silicon sublimation is a decisive factor for obtaining large area homogenous graphene. It is also shown that a lower substrate surface roughness results in more uniform step bunching with a lower distribution of step heights and consequently better quality of the grown graphene. Large homogeneous areas of graphene monolayers (over 50 x 50 mu m(2)) have been grown on 3C-SiC (1 1 1) substrates. The comparison with the other polytypes suggests a similarity in the surface behaviour of 3C- and 6H-SiC. (C) 2013 Elsevier Ltd. All rights reserved. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3931432
- author
- Yazdi, G. Reza ; Vasiliauskas, Remigijus ; Iakimov, Tihomir ; Zakharov, Alexei LU ; Syvajarvi, Mikael and Yakimova, Rositza
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Carbon
- volume
- 57
- pages
- 477 - 484
- publisher
- Elsevier
- external identifiers
-
- wos:000319030000055
- scopus:84875363736
- ISSN
- 0008-6223
- DOI
- 10.1016/j.carbon.2013.02.022
- language
- English
- LU publication?
- yes
- id
- 18a19bec-fa99-4bdd-9f7b-d5d175b36711 (old id 3931432)
- date added to LUP
- 2016-04-01 10:06:39
- date last changed
- 2022-01-25 19:51:25
@article{18a19bec-fa99-4bdd-9f7b-d5d175b36711,
abstract = {{Epitaxial graphene growth was performed on the Si-terminated face of 4H-, 6H-, and 3C-SiC substrates by silicon sublimation from SiC in argon atmosphere at a temperature of 2000 degrees C. Graphene surface morphology, thickness and band structure have been assessed by using atomic force microscopy, low-energy electron microscopy, and angle-resolved photoemission spectroscopy, respectively. Differences in the morphology of the graphene layers on different SiC polytypes is related mainly to the minimization of the terrace surface energy during the step bunching process. The uniformity of silicon sublimation is a decisive factor for obtaining large area homogenous graphene. It is also shown that a lower substrate surface roughness results in more uniform step bunching with a lower distribution of step heights and consequently better quality of the grown graphene. Large homogeneous areas of graphene monolayers (over 50 x 50 mu m(2)) have been grown on 3C-SiC (1 1 1) substrates. The comparison with the other polytypes suggests a similarity in the surface behaviour of 3C- and 6H-SiC. (C) 2013 Elsevier Ltd. All rights reserved.}},
author = {{Yazdi, G. Reza and Vasiliauskas, Remigijus and Iakimov, Tihomir and Zakharov, Alexei and Syvajarvi, Mikael and Yakimova, Rositza}},
issn = {{0008-6223}},
language = {{eng}},
pages = {{477--484}},
publisher = {{Elsevier}},
series = {{Carbon}},
title = {{Growth of large area monolayer graphene on 3C-SiC and a comparison with other SiC polytypes}},
url = {{http://dx.doi.org/10.1016/j.carbon.2013.02.022}},
doi = {{10.1016/j.carbon.2013.02.022}},
volume = {{57}},
year = {{2013}},
}