Advanced

Tin-stabilized (1 x 2) and (1 x 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations

Lang, J. J. K.; Laukkanen, P.; Punkkinen, M. P. J.; Ahola-Tuomi, M.; Kuzmin, M.; Tuominen, V.; Dahl, J.; Tuominen, M.; Perala, R. E. and Schulte, Karina LU , et al. (2011) In Surface Science 605(9-10). p.883-888
Abstract
Tin (Sn) induced (1 x 2) reconstructions on GaAs(100) and InAs(100) substrates have been studied by low energy electron diffraction (LEED), photoelectron spectroscopy, scanning tunneling microscopy/spectroscopy (STM/STS) and ab initio calculations. The comparison of measured and calculated STM images and surface core-level shifts shows that these surfaces can be well described with the energetically stable building blocks that consist of Sn-III dimers. Furthermore, a new Sn-induced (1 x 4) reconstruction was found. In this reconstruction the occupied dangling bonds are closer to each other than in the more symmetric (1 x 2) reconstruction, and it is shown that the (1 x 4) reconstruction is stabilized as the adatom size increases. (C) 2011... (More)
Tin (Sn) induced (1 x 2) reconstructions on GaAs(100) and InAs(100) substrates have been studied by low energy electron diffraction (LEED), photoelectron spectroscopy, scanning tunneling microscopy/spectroscopy (STM/STS) and ab initio calculations. The comparison of measured and calculated STM images and surface core-level shifts shows that these surfaces can be well described with the energetically stable building blocks that consist of Sn-III dimers. Furthermore, a new Sn-induced (1 x 4) reconstruction was found. In this reconstruction the occupied dangling bonds are closer to each other than in the more symmetric (1 x 2) reconstruction, and it is shown that the (1 x 4) reconstruction is stabilized as the adatom size increases. (C) 2011 Elsevier B.V. All rights reserved. (Less)
Please use this url to cite or link to this publication:
author
, et al. (More)
(Less)
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Ab initio calculations, Scanning-tunneling microscopy, Synchrotron, radiation photoelectron spectroscopy, Surface reconstruction, Gallium-arsenide (GaAs), Indium-arsenide (InAs), Single crystal surfaces
in
Surface Science
volume
605
issue
9-10
pages
883 - 888
publisher
Elsevier
external identifiers
  • wos:000290050600008
  • scopus:79953278956
ISSN
0039-6028
DOI
10.1016/j.susc.2011.01.034
language
English
LU publication?
yes
id
71662b80-16ba-49a4-813f-930749538c5f (old id 1964186)
date added to LUP
2011-05-24 07:53:38
date last changed
2017-01-01 05:58:53
@article{71662b80-16ba-49a4-813f-930749538c5f,
  abstract     = {Tin (Sn) induced (1 x 2) reconstructions on GaAs(100) and InAs(100) substrates have been studied by low energy electron diffraction (LEED), photoelectron spectroscopy, scanning tunneling microscopy/spectroscopy (STM/STS) and ab initio calculations. The comparison of measured and calculated STM images and surface core-level shifts shows that these surfaces can be well described with the energetically stable building blocks that consist of Sn-III dimers. Furthermore, a new Sn-induced (1 x 4) reconstruction was found. In this reconstruction the occupied dangling bonds are closer to each other than in the more symmetric (1 x 2) reconstruction, and it is shown that the (1 x 4) reconstruction is stabilized as the adatom size increases. (C) 2011 Elsevier B.V. All rights reserved.},
  author       = {Lang, J. J. K. and Laukkanen, P. and Punkkinen, M. P. J. and Ahola-Tuomi, M. and Kuzmin, M. and Tuominen, V. and Dahl, J. and Tuominen, M. and Perala, R. E. and Schulte, Karina and Adell, Johan and Sadowski, J. and Kanski, J. and Guina, M. and Pessa, M. and Kokko, K. and Johansson, B. and Vitos, L. and Vayrynen, I. J.},
  issn         = {0039-6028},
  keyword      = {Ab initio calculations,Scanning-tunneling microscopy,Synchrotron,radiation photoelectron spectroscopy,Surface reconstruction,Gallium-arsenide (GaAs),Indium-arsenide (InAs),Single crystal surfaces},
  language     = {eng},
  number       = {9-10},
  pages        = {883--888},
  publisher    = {Elsevier},
  series       = {Surface Science},
  title        = {Tin-stabilized (1 x 2) and (1 x 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations},
  url          = {http://dx.doi.org/10.1016/j.susc.2011.01.034},
  volume       = {605},
  year         = {2011},
}