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Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires

Kriegner, Dominik; Panse, Christian; Mandl, Bernhard LU ; Dick Thelander, Kimberly LU ; Keplinger, Mario; Persson, Johan M.; Caroff, Philippe LU ; Ercolani, Daniele; Sorba, Lucia and Bechstedt, Friedhelm, et al. (2011) In Nano Letters 11(4). p.1483-1489
Abstract
The atomic distances in hexagonal polytypes of III-V compound semiconductors differ from the values expected from simply a change of the stacking sequence of (111) lattice planes. While these changes were difficult to quantify so far, we accurately determine the lattice parameters of zinc blende, wurtzite, and 4H polytypes for InAs and InSb nanowires, using X-ray diffraction and transmission electron microscopy. The results are compared to density functional theory calculations. Experiment and theory show that the occurrence of hexagonal bilayers tend to strech the distances of atomic layers parallel to the c-axis and to reduce the in-plane distances compared to those in zinc blende. The change of the lattice parameters scales linearly... (More)
The atomic distances in hexagonal polytypes of III-V compound semiconductors differ from the values expected from simply a change of the stacking sequence of (111) lattice planes. While these changes were difficult to quantify so far, we accurately determine the lattice parameters of zinc blende, wurtzite, and 4H polytypes for InAs and InSb nanowires, using X-ray diffraction and transmission electron microscopy. The results are compared to density functional theory calculations. Experiment and theory show that the occurrence of hexagonal bilayers tend to strech the distances of atomic layers parallel to the c-axis and to reduce the in-plane distances compared to those in zinc blende. The change of the lattice parameters scales linearly with the hexagonality of the polytype, defined as the fraction of bilayers with hexagonal character within one unit cell. (Less)
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Contribution to journal
publication status
published
subject
keywords
Nanowires, polytypes, crystal structure, X-ray diffraction, density, functional theory
in
Nano Letters
volume
11
issue
4
pages
1483 - 1489
publisher
The American Chemical Society
external identifiers
  • wos:000289341500016
  • scopus:79954479071
ISSN
1530-6992
DOI
10.1021/nl1041512
language
English
LU publication?
yes
id
801b6ce4-a1f7-4e93-b5c5-2ef6fd640ad8 (old id 1965510)
date added to LUP
2011-05-23 08:19:52
date last changed
2017-10-08 03:56:54
@article{801b6ce4-a1f7-4e93-b5c5-2ef6fd640ad8,
  abstract     = {The atomic distances in hexagonal polytypes of III-V compound semiconductors differ from the values expected from simply a change of the stacking sequence of (111) lattice planes. While these changes were difficult to quantify so far, we accurately determine the lattice parameters of zinc blende, wurtzite, and 4H polytypes for InAs and InSb nanowires, using X-ray diffraction and transmission electron microscopy. The results are compared to density functional theory calculations. Experiment and theory show that the occurrence of hexagonal bilayers tend to strech the distances of atomic layers parallel to the c-axis and to reduce the in-plane distances compared to those in zinc blende. The change of the lattice parameters scales linearly with the hexagonality of the polytype, defined as the fraction of bilayers with hexagonal character within one unit cell.},
  author       = {Kriegner, Dominik and Panse, Christian and Mandl, Bernhard and Dick Thelander, Kimberly and Keplinger, Mario and Persson, Johan M. and Caroff, Philippe and Ercolani, Daniele and Sorba, Lucia and Bechstedt, Friedhelm and Stangl, Julian and Bauer, Guenther},
  issn         = {1530-6992},
  keyword      = {Nanowires,polytypes,crystal structure,X-ray diffraction,density,functional theory},
  language     = {eng},
  number       = {4},
  pages        = {1483--1489},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires},
  url          = {http://dx.doi.org/10.1021/nl1041512},
  volume       = {11},
  year         = {2011},
}