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Technology and studies of electron transport in InAs nanowire junctions

Suyatin, Dmitry LU orcid (2007)
Abstract
The topic of this thesis is technology and experimental studies of electron transport in Indium Arsenide (InAs) nanowires and InAs nanowire junctions. The aim of this work has been fabrication of nanoelectronic devices which have possibilities for future nanoelectronics.

The first chapter gives an introduction to modern electronics and some important concepts. The second chapter presents an overview of electron transport in three-terminal conductor junctions. The third chapter introduces the InAs self-forming nanowires. The paper attached to the thesis deals with the technology of the formation of electrical contacts to InAs nanowires. The electrical properties of the three-terminal nanowire junction devices and the device... (More)
The topic of this thesis is technology and experimental studies of electron transport in Indium Arsenide (InAs) nanowires and InAs nanowire junctions. The aim of this work has been fabrication of nanoelectronic devices which have possibilities for future nanoelectronics.

The first chapter gives an introduction to modern electronics and some important concepts. The second chapter presents an overview of electron transport in three-terminal conductor junctions. The third chapter introduces the InAs self-forming nanowires. The paper attached to the thesis deals with the technology of the formation of electrical contacts to InAs nanowires. The electrical properties of the three-terminal nanowire junction devices and the device applications are shown and discussed in the manuscript attached to the thesis. (Less)
Please use this url to cite or link to this publication:
author
supervisor
organization
publishing date
type
Thesis
publication status
published
subject
pages
46 pages
publisher
Division of Solid State Physics, Department of Physics, Lund Institute of Technology
language
English
LU publication?
yes
id
d45559e0-d002-4936-a2df-2092503b2f4c (old id 1968816)
date added to LUP
2016-04-04 10:07:39
date last changed
2022-02-08 02:17:46
@misc{d45559e0-d002-4936-a2df-2092503b2f4c,
  abstract     = {{The topic of this thesis is technology and experimental studies of electron transport in Indium Arsenide (InAs) nanowires and InAs nanowire junctions. The aim of this work has been fabrication of nanoelectronic devices which have possibilities for future nanoelectronics.<br/><br>
The first chapter gives an introduction to modern electronics and some important concepts. The second chapter presents an overview of electron transport in three-terminal conductor junctions. The third chapter introduces the InAs self-forming nanowires. The paper attached to the thesis deals with the technology of the formation of electrical contacts to InAs nanowires. The electrical properties of the three-terminal nanowire junction devices and the device applications are shown and discussed in the manuscript attached to the thesis.}},
  author       = {{Suyatin, Dmitry}},
  language     = {{eng}},
  note         = {{Licentiate Thesis}},
  publisher    = {{Division of Solid State Physics, Department of Physics, Lund Institute of Technology}},
  title        = {{Technology and studies of electron transport in InAs nanowire junctions}},
  year         = {{2007}},
}