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A 1.6-2.6GHz 29dBm Injection-Locked Power Amplifier with 64% peak PAE in 65nm CMOS

Lindstrand, Jonas LU ; Bryant, Carl LU ; Törmänen, Markus LU and Sjöland, Henrik LU (2011) IEEE European Solid State Circuits Conference, ESSCIRC 2011 In Proc. IEEE European Solid State Circuits Conference p.299-302
Abstract
This paper presents a wideband CMOS power

amplifier intended for cellular handset applications. The circuit

exploits injection locking to achieve a power gain of 20.5dB from

a single stage amplifier. The maximum output power of 29dBm,

with a peak drain- and power-added-efficiency (PAE) of 66%

and 64%, respectively, occurs at a center frequency of 2GHz

with a 3V supply. A cross-coupled cascode topology enables a

wideband PAE exceeding 50% from 1.6 to 2.6GHz. For output

power levels below 4dBm the circuit operates as a linear class

AB amplifier with a power consumption of 17mW from a 0.48V

supply. The power gain of 20.5dB is kept constant for all... (More)
This paper presents a wideband CMOS power

amplifier intended for cellular handset applications. The circuit

exploits injection locking to achieve a power gain of 20.5dB from

a single stage amplifier. The maximum output power of 29dBm,

with a peak drain- and power-added-efficiency (PAE) of 66%

and 64%, respectively, occurs at a center frequency of 2GHz

with a 3V supply. A cross-coupled cascode topology enables a

wideband PAE exceeding 50% from 1.6 to 2.6GHz. For output

power levels below 4dBm the circuit operates as a linear class

AB amplifier with a power consumption of 17mW from a 0.48V

supply. The power gain of 20.5dB is kept constant for all output

powers; with an AM-AM- and AM-PM-conversion of 0.2dB and

17deg, respectively, over the entire WCDMA dynamic range of

80dB. The circuit is implemented in a standard 65nm CMOS

process with a total chip area of 0.52x0.48mm2 including pads. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Power efficiency, Power amplifier, Injection lock, CMOS, Hybrid EER
in
Proc. IEEE European Solid State Circuits Conference
pages
4 pages
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
IEEE European Solid State Circuits Conference, ESSCIRC 2011
external identifiers
  • scopus:82955241343
ISSN
1930-8833
language
English
LU publication?
yes
id
de701b66-f638-4e8b-98b9-81b14e5ca82f (old id 1973815)
date added to LUP
2011-06-07 13:14:10
date last changed
2017-08-06 03:55:32
@inproceedings{de701b66-f638-4e8b-98b9-81b14e5ca82f,
  abstract     = {This paper presents a wideband CMOS power<br/><br>
amplifier intended for cellular handset applications. The circuit<br/><br>
exploits injection locking to achieve a power gain of 20.5dB from<br/><br>
a single stage amplifier. The maximum output power of 29dBm,<br/><br>
with a peak drain- and power-added-efficiency (PAE) of 66%<br/><br>
and 64%, respectively, occurs at a center frequency of 2GHz<br/><br>
with a 3V supply. A cross-coupled cascode topology enables a<br/><br>
wideband PAE exceeding 50% from 1.6 to 2.6GHz. For output<br/><br>
power levels below 4dBm the circuit operates as a linear class<br/><br>
AB amplifier with a power consumption of 17mW from a 0.48V<br/><br>
supply. The power gain of 20.5dB is kept constant for all output<br/><br>
powers; with an AM-AM- and AM-PM-conversion of 0.2dB and<br/><br>
17deg, respectively, over the entire WCDMA dynamic range of<br/><br>
80dB. The circuit is implemented in a standard 65nm CMOS<br/><br>
process with a total chip area of 0.52x0.48mm2 including pads.},
  author       = {Lindstrand, Jonas and Bryant, Carl and Törmänen, Markus and Sjöland, Henrik},
  booktitle    = {Proc. IEEE European Solid State Circuits Conference},
  issn         = {1930-8833},
  keyword      = {Power efficiency,Power
amplifier,Injection lock,CMOS,Hybrid EER},
  language     = {eng},
  pages        = {299--302},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  title        = {A 1.6-2.6GHz 29dBm Injection-Locked Power Amplifier with 64% peak PAE in 65nm CMOS},
  year         = {2011},
}