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Charge state readout and hyperfine interaction in a few-electron InGaAs double quantum dot

Larsson, Marcus LU and Xu, Hongqi LU (2011) In Physical Review B (Condensed Matter and Materials Physics) 83(23).
Abstract
A laterally defined InGaAs double quantum dot with an integrated charge readout sensor is realized in an InGaAs/InP heterostructure. The charge states of the double quantum dot are measured with the use of the charge readout sensor in the few-electron regime in which the current is too weak to be observable by direct measurements of electron transport through the double dot. We also measure the leakage current of the double quantum dot in the Pauli spin-blockade few-electron regime and study the singlet-triplet state mixing by the hyperfine coupling to the nuclear spins. The measurements of the leakage current in the weak external-magnetic-field region and for weak interdot couplings allow us to extract an effective nuclear magnetic field... (More)
A laterally defined InGaAs double quantum dot with an integrated charge readout sensor is realized in an InGaAs/InP heterostructure. The charge states of the double quantum dot are measured with the use of the charge readout sensor in the few-electron regime in which the current is too weak to be observable by direct measurements of electron transport through the double dot. We also measure the leakage current of the double quantum dot in the Pauli spin-blockade few-electron regime and study the singlet-triplet state mixing by the hyperfine coupling to the nuclear spins. The measurements of the leakage current in the weak external-magnetic-field region and for weak interdot couplings allow us to extract an effective nuclear magnetic field in the double-dot system. We also study spin relaxation and transport processes in the Pauli spin-blockade region at large external magnetic fields and observe transport through the excited triplet state in the few-electron double quantum dot. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
83
issue
23
publisher
American Physical Society
external identifiers
  • wos:000291150400006
  • scopus:79961143423
ISSN
1098-0121
DOI
10.1103/PhysRevB.83.235302
language
English
LU publication?
yes
id
a86ff6d7-5643-49f0-9a27-47629ae34098 (old id 1985208)
date added to LUP
2011-07-06 15:38:09
date last changed
2017-01-15 03:47:08
@article{a86ff6d7-5643-49f0-9a27-47629ae34098,
  abstract     = {A laterally defined InGaAs double quantum dot with an integrated charge readout sensor is realized in an InGaAs/InP heterostructure. The charge states of the double quantum dot are measured with the use of the charge readout sensor in the few-electron regime in which the current is too weak to be observable by direct measurements of electron transport through the double dot. We also measure the leakage current of the double quantum dot in the Pauli spin-blockade few-electron regime and study the singlet-triplet state mixing by the hyperfine coupling to the nuclear spins. The measurements of the leakage current in the weak external-magnetic-field region and for weak interdot couplings allow us to extract an effective nuclear magnetic field in the double-dot system. We also study spin relaxation and transport processes in the Pauli spin-blockade region at large external magnetic fields and observe transport through the excited triplet state in the few-electron double quantum dot.},
  author       = {Larsson, Marcus and Xu, Hongqi},
  issn         = {1098-0121},
  language     = {eng},
  number       = {23},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Charge state readout and hyperfine interaction in a few-electron InGaAs double quantum dot},
  url          = {http://dx.doi.org/10.1103/PhysRevB.83.235302},
  volume       = {83},
  year         = {2011},
}