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Properties of self-assembled Bi nanolines on InAs(100) studied by core-level and valence-band photoemission, and first-principles calculations

Ahola-Tuomi, M.; Punkkinen, M. P. J.; Laukkanen, P.; Kuzmin, M.; Lang, J.; Schulte, Karina LU ; Pietzsch, Annette LU ; Perala, R. E.; Rasanen, N. and Vayrynen, I. J. (2011) In Physical Review B (Condensed Matter and Materials Physics) 83(24).
Abstract
We have studied self-assembled bismuth (Bi) nanolines on the Bi-terminated InAs(100) surface by core-level and valence-band photoelectron spectroscopy, and ab initio first-principles calculations. A structural model for this intriguing surface is suggested based on the comparison of the measured and calculated core-level shifts. Also, the atomic origins for the core-level shifts are proposed based on the calculations. A clear peak related to this surface was observed in the valence band 0.34 eV below the Fermi level, which can be used as a "fingerprint" of a well-ordered Bi/InAs(100) nanoline surface.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
83
issue
24
publisher
American Physical Society
external identifiers
  • wos:000291398500002
  • scopus:79961240954
ISSN
1098-0121
DOI
10.1103/PhysRevB.83.245401
language
English
LU publication?
yes
id
737c4602-c3d8-4862-980e-0a17b66022f1 (old id 1985221)
date added to LUP
2011-07-06 15:12:33
date last changed
2017-01-08 04:49:18
@article{737c4602-c3d8-4862-980e-0a17b66022f1,
  abstract     = {We have studied self-assembled bismuth (Bi) nanolines on the Bi-terminated InAs(100) surface by core-level and valence-band photoelectron spectroscopy, and ab initio first-principles calculations. A structural model for this intriguing surface is suggested based on the comparison of the measured and calculated core-level shifts. Also, the atomic origins for the core-level shifts are proposed based on the calculations. A clear peak related to this surface was observed in the valence band 0.34 eV below the Fermi level, which can be used as a "fingerprint" of a well-ordered Bi/InAs(100) nanoline surface.},
  author       = {Ahola-Tuomi, M. and Punkkinen, M. P. J. and Laukkanen, P. and Kuzmin, M. and Lang, J. and Schulte, Karina and Pietzsch, Annette and Perala, R. E. and Rasanen, N. and Vayrynen, I. J.},
  issn         = {1098-0121},
  language     = {eng},
  number       = {24},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Properties of self-assembled Bi nanolines on InAs(100) studied by core-level and valence-band photoemission, and first-principles calculations},
  url          = {http://dx.doi.org/10.1103/PhysRevB.83.245401},
  volume       = {83},
  year         = {2011},
}