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The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells?

Murin, L. I.; Tolkacheva, E. A.; Markevich, V. P.; Peaker, A. R.; Hamilton, B.; Monakhov, E.; Svensson, B. G.; Lindström, Lennart LU ; Santos, P. and Coutinho, J., et al. (2011) In Applied Physics Letters 98(18).
Abstract
It is widely believed that the light induced degradation of crystalline silicon solar cells is due to the formation of a BsO2i recombination center created by the optically excited migration of the oxygen dimer (charge-state-driven motion). In this letter the concentration dependence of the neutral state of O-2i on [O-i] in p- and n-type Cz-Si has been determined using infrared absorption. A systematic search for the absorption signature of the dimer in the doubly positively charged state has been unsuccessful. These data strongly suggest that charge-state-driven motion (Bourgoin-Corbett mechanism) of the oxygen dimer cannot occur in typical solar silicon and hence bring into question the accepted degradation mechanism. (C) 2011 American... (More)
It is widely believed that the light induced degradation of crystalline silicon solar cells is due to the formation of a BsO2i recombination center created by the optically excited migration of the oxygen dimer (charge-state-driven motion). In this letter the concentration dependence of the neutral state of O-2i on [O-i] in p- and n-type Cz-Si has been determined using infrared absorption. A systematic search for the absorption signature of the dimer in the doubly positively charged state has been unsuccessful. These data strongly suggest that charge-state-driven motion (Bourgoin-Corbett mechanism) of the oxygen dimer cannot occur in typical solar silicon and hence bring into question the accepted degradation mechanism. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3584138] (Less)
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Applied Physics Letters
volume
98
issue
18
publisher
American Institute of Physics
external identifiers
  • wos:000290392300027
  • scopus:79957475711
ISSN
0003-6951
DOI
10.1063/1.3584138
language
English
LU publication?
yes
id
873441f0-019f-48c1-aa18-0d0d0fb4a173 (old id 1987055)
date added to LUP
2011-06-29 09:49:00
date last changed
2017-09-10 03:09:16
@article{873441f0-019f-48c1-aa18-0d0d0fb4a173,
  abstract     = {It is widely believed that the light induced degradation of crystalline silicon solar cells is due to the formation of a BsO2i recombination center created by the optically excited migration of the oxygen dimer (charge-state-driven motion). In this letter the concentration dependence of the neutral state of O-2i on [O-i] in p- and n-type Cz-Si has been determined using infrared absorption. A systematic search for the absorption signature of the dimer in the doubly positively charged state has been unsuccessful. These data strongly suggest that charge-state-driven motion (Bourgoin-Corbett mechanism) of the oxygen dimer cannot occur in typical solar silicon and hence bring into question the accepted degradation mechanism. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3584138]},
  articleno    = {182101},
  author       = {Murin, L. I. and Tolkacheva, E. A. and Markevich, V. P. and Peaker, A. R. and Hamilton, B. and Monakhov, E. and Svensson, B. G. and Lindström, Lennart and Santos, P. and Coutinho, J. and Carvalho, A.},
  issn         = {0003-6951},
  language     = {eng},
  number       = {18},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells?},
  url          = {http://dx.doi.org/10.1063/1.3584138},
  volume       = {98},
  year         = {2011},
}