The effect of hydrogen on the morphology of n-type silicon electrodes under electrochemical conditions
Goldar, A. ; Roser, S. J. ; Caruana, D. ; Gerstenberg, M. C. ; Hughes, A. V. and Edler, K. J. LU
(2001)
In Physical Chemistry Chemical Physics
3(24).
p.5559-5566
- Abstract
We study the electrochemical roughening of a silicon electrode surface during the hydrogen evolution reaction in a fluoride electrolyte using neutron reflection. We demonstrate that as the roughening process modifies the morphology of the silicon surface we can follow the changes by observing the changes in the shape of the total reflection feature. We assume that the change in the morphology of the surface is due to the diffusion of hydrogen in the silicon electrode. This assumption allow us to model the changes in the reflected intensity at two different angles and find the diffusion exponent for the diffusion of hydrogen in the silicon lattice.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1a96199a-89ce-4587-b19f-49b7dad0b13b
- author
- Goldar, A.
; Roser, S. J.
; Caruana, D.
; Gerstenberg, M. C.
; Hughes, A. V.
and Edler, K. J.
LU
- publishing date
- 2001
- type
- Contribution to journal
- publication status
- published
- in
- Physical Chemistry Chemical Physics
- volume
- 3
- issue
- 24
- pages
- 8 pages
- publisher
- Royal Society of Chemistry
- external identifiers
-
- scopus:0035696098
- ISSN
- 1463-9076
- DOI
- 10.1039/b104378c
- language
- English
- LU publication?
- no
- id
- 1a96199a-89ce-4587-b19f-49b7dad0b13b
- date added to LUP
- 2023-05-04 18:43:55
- date last changed
- 2023-06-13 12:50:26
@article{1a96199a-89ce-4587-b19f-49b7dad0b13b,
abstract = {{<p>We study the electrochemical roughening of a silicon electrode surface during the hydrogen evolution reaction in a fluoride electrolyte using neutron reflection. We demonstrate that as the roughening process modifies the morphology of the silicon surface we can follow the changes by observing the changes in the shape of the total reflection feature. We assume that the change in the morphology of the surface is due to the diffusion of hydrogen in the silicon electrode. This assumption allow us to model the changes in the reflected intensity at two different angles and find the diffusion exponent for the diffusion of hydrogen in the silicon lattice.</p>}},
author = {{Goldar, A. and Roser, S. J. and Caruana, D. and Gerstenberg, M. C. and Hughes, A. V. and Edler, K. J.}},
issn = {{1463-9076}},
language = {{eng}},
number = {{24}},
pages = {{5559--5566}},
publisher = {{Royal Society of Chemistry}},
series = {{Physical Chemistry Chemical Physics}},
title = {{The effect of hydrogen on the morphology of n-type silicon electrodes under electrochemical conditions}},
url = {{http://dx.doi.org/10.1039/b104378c}},
doi = {{10.1039/b104378c}},
volume = {{3}},
year = {{2001}},
}