High carrier mobility in low band gap polymer-based field-effect transistors
(2005) In Applied Physics Letters 87(25).- Abstract
- A conjugated polymer with a low band gap of 1.21 eV, i.e., absorbing infrared light, is demonstrated as active material in field-effect transistors (FETs). The material consists of alternating fluorene units and low band gap segments with electron donor-acceptor-donor units composed of two electron-donating thiophene rings attached on both sides of a thiadiazolo-quinoxaline electron-acceptor group. The polymer is solution-processable and air-stable; the resulting FETs exhibit typical p-channel characteristics and field-effect mobility of 0.03 cm(2) V-1 s(-1).
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/210662
- author
- Chen, MX ; Crispin, X ; Perzon, E ; Andersson, MR ; Pullerits, Tönu LU ; Andersson, M ; Inganas, O and Berggren, M
- organization
- publishing date
- 2005
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 87
- issue
- 25
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000234118900044
- scopus:29144488382
- ISSN
- 0003-6951
- DOI
- 10.1063/1.2142289
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Chemical Physics (S) (011001060)
- id
- 1b3bcf27-158e-4449-b4ea-91b086ef4eae (old id 210662)
- date added to LUP
- 2016-04-01 11:46:31
- date last changed
- 2022-04-05 04:50:12
@article{1b3bcf27-158e-4449-b4ea-91b086ef4eae,
abstract = {{A conjugated polymer with a low band gap of 1.21 eV, i.e., absorbing infrared light, is demonstrated as active material in field-effect transistors (FETs). The material consists of alternating fluorene units and low band gap segments with electron donor-acceptor-donor units composed of two electron-donating thiophene rings attached on both sides of a thiadiazolo-quinoxaline electron-acceptor group. The polymer is solution-processable and air-stable; the resulting FETs exhibit typical p-channel characteristics and field-effect mobility of 0.03 cm(2) V-1 s(-1).}},
author = {{Chen, MX and Crispin, X and Perzon, E and Andersson, MR and Pullerits, Tönu and Andersson, M and Inganas, O and Berggren, M}},
issn = {{0003-6951}},
language = {{eng}},
number = {{25}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Letters}},
title = {{High carrier mobility in low band gap polymer-based field-effect transistors}},
url = {{http://dx.doi.org/10.1063/1.2142289}},
doi = {{10.1063/1.2142289}},
volume = {{87}},
year = {{2005}},
}