Thermal double donor annihilation and oxygen precipitation at around 650 degrees C in Czochralski-grown Si: local vibrational mode studies
(2005) In Journal of Physics: Condensed Matter 17(22). p.2237-2246- Abstract
- We have used local vibrational mode (LVM) spectroscopy to monitor the formation of oxygen-related thermal double donors (TDDs) at 45 0 degrees C and their annihilation at 650 degrees C in carbon-lean Czochralski-grown (Cz-) Si crystals. A few samples were treated at 650 degrees C under high hydrostatic pressure. It is found that the annihilation of TDDs at 650 degrees C results not only in a partial recovery of the interstitial oxygen, but also in the appearance of a number of new O-related LVM bands in the range 990-1110 cm(-1). The positions of these lines and their shapes are identical to those observed for Cz-Si irradiated with electrons or neutrons and annealed at 600-700 degrees C. Since the lines appear upon annealing out of VO3 and... (More)
- We have used local vibrational mode (LVM) spectroscopy to monitor the formation of oxygen-related thermal double donors (TDDs) at 45 0 degrees C and their annihilation at 650 degrees C in carbon-lean Czochralski-grown (Cz-) Si crystals. A few samples were treated at 650 degrees C under high hydrostatic pressure. It is found that the annihilation of TDDs at 650 degrees C results not only in a partial recovery of the interstitial oxygen, but also in the appearance of a number of new O-related LVM bands in the range 990-1110 cm(-1). The positions of these lines and their shapes are identical to those observed for Cz-Si irradiated with electrons or neutrons and annealed at 600-700 degrees C. Since the lines appear upon annealing out of VO3 and VO4 defects in irradiated samples, they are suggested to arise from VOm (m > 4) complexes. In both kinds of samples, pre-annealed and preirradiated, the new LVM bands disappear upon prolonged annealing at 650 degrees C while enhanced oxygen precipitation occurs. The VOm defects are suggested to serve as nuclei for oxygen precipitates developing at around 650 degrees C. High hydrostatic pressure is found to enhance further (up to 4-5 times) the oxygen precipitation process at 650 degrees C in the samples pre-annealed at 450 degrees C. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/231993
- author
- Murin, L I ; Lindström, Lennart LU ; Markevich, V P ; Misiuk, A and Londos, C A
- organization
- publishing date
- 2005
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Journal of Physics: Condensed Matter
- volume
- 17
- issue
- 22
- pages
- 2237 - 2246
- publisher
- IOP Publishing
- external identifiers
-
- wos:000230663100012
- scopus:21144437613
- ISSN
- 1361-648X
- DOI
- 10.1088/0953-8984/17/22/011
- language
- English
- LU publication?
- yes
- id
- 1ce14a71-994f-4bc1-9678-eb34be403910 (old id 231993)
- date added to LUP
- 2016-04-01 16:15:02
- date last changed
- 2022-01-28 18:23:06
@article{1ce14a71-994f-4bc1-9678-eb34be403910,
abstract = {{We have used local vibrational mode (LVM) spectroscopy to monitor the formation of oxygen-related thermal double donors (TDDs) at 45 0 degrees C and their annihilation at 650 degrees C in carbon-lean Czochralski-grown (Cz-) Si crystals. A few samples were treated at 650 degrees C under high hydrostatic pressure. It is found that the annihilation of TDDs at 650 degrees C results not only in a partial recovery of the interstitial oxygen, but also in the appearance of a number of new O-related LVM bands in the range 990-1110 cm(-1). The positions of these lines and their shapes are identical to those observed for Cz-Si irradiated with electrons or neutrons and annealed at 600-700 degrees C. Since the lines appear upon annealing out of VO3 and VO4 defects in irradiated samples, they are suggested to arise from VOm (m > 4) complexes. In both kinds of samples, pre-annealed and preirradiated, the new LVM bands disappear upon prolonged annealing at 650 degrees C while enhanced oxygen precipitation occurs. The VOm defects are suggested to serve as nuclei for oxygen precipitates developing at around 650 degrees C. High hydrostatic pressure is found to enhance further (up to 4-5 times) the oxygen precipitation process at 650 degrees C in the samples pre-annealed at 450 degrees C.}},
author = {{Murin, L I and Lindström, Lennart and Markevich, V P and Misiuk, A and Londos, C A}},
issn = {{1361-648X}},
language = {{eng}},
number = {{22}},
pages = {{2237--2246}},
publisher = {{IOP Publishing}},
series = {{Journal of Physics: Condensed Matter}},
title = {{Thermal double donor annihilation and oxygen precipitation at around 650 degrees C in Czochralski-grown Si: local vibrational mode studies}},
url = {{http://dx.doi.org/10.1088/0953-8984/17/22/011}},
doi = {{10.1088/0953-8984/17/22/011}},
volume = {{17}},
year = {{2005}},
}