Advanced

TiO2 chemical vapor deposition on Si(111) in ultrahigh vacuum: Transition from interfacial phase to crystalline phase in the reaction limited regime

Karlsson, P. G.; Richter, J. H.; Andersson, Martin LU ; Johansson, M. K-J.; Blomquist, Jakob LU ; Uvdal, Per LU and Sandell, A. (2011) In Surface Science 605(13-14). p.1147-1156
Abstract
The interaction between the metal organic precursor molecule titanium(IV) isopropoxide (TTIP) and three different surfaces has been studied: Si(111)-(7 x 7), SiOx/Si(111) and TiO2. These surfaces represent the different surface compositions encountered during TTIP mediated TiO2 chemical vapor deposition on Si(111). The surface chemistry of the titanium(IV) isopropoxide precursor and the film growth have been explored by core level photoelectron spectroscopy and x-ray absorption spectroscopy using synchrotron radiation. The resulting film morphology has been imaged with scanning tunneling microscopy. The growth rate depends on both surface temperature and surface composition. The behavior can be rationalized in terms of the surface... (More)
The interaction between the metal organic precursor molecule titanium(IV) isopropoxide (TTIP) and three different surfaces has been studied: Si(111)-(7 x 7), SiOx/Si(111) and TiO2. These surfaces represent the different surface compositions encountered during TTIP mediated TiO2 chemical vapor deposition on Si(111). The surface chemistry of the titanium(IV) isopropoxide precursor and the film growth have been explored by core level photoelectron spectroscopy and x-ray absorption spectroscopy using synchrotron radiation. The resulting film morphology has been imaged with scanning tunneling microscopy. The growth rate depends on both surface temperature and surface composition. The behavior can be rationalized in terms of the surface stability of isopropoxy and isopropyl groups, confirming that growth at 573 K is a reaction limited process. (C) 2011 Elsevier B.V. All rights reserved. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Chemical vapor deposition, Synchrotron radiation photoelectron, spectroscopy, X-ray absorption spectroscopy, Scanning tunneling, microscopy, Growth, Titanium dioxide, Low index single crystal, surfaces, Crystalline-amorphous interfaces
in
Surface Science
volume
605
issue
13-14
pages
1147 - 1156
publisher
Elsevier
external identifiers
  • wos:000291905400005
  • scopus:79957853862
ISSN
0039-6028
DOI
10.1016/j.susc.2011.03.001
language
English
LU publication?
yes
id
a52d275e-4d1c-4ed6-b249-a4e0ec116976 (old id 2032511)
date added to LUP
2011-07-26 14:29:54
date last changed
2017-09-10 04:20:49
@article{a52d275e-4d1c-4ed6-b249-a4e0ec116976,
  abstract     = {The interaction between the metal organic precursor molecule titanium(IV) isopropoxide (TTIP) and three different surfaces has been studied: Si(111)-(7 x 7), SiOx/Si(111) and TiO2. These surfaces represent the different surface compositions encountered during TTIP mediated TiO2 chemical vapor deposition on Si(111). The surface chemistry of the titanium(IV) isopropoxide precursor and the film growth have been explored by core level photoelectron spectroscopy and x-ray absorption spectroscopy using synchrotron radiation. The resulting film morphology has been imaged with scanning tunneling microscopy. The growth rate depends on both surface temperature and surface composition. The behavior can be rationalized in terms of the surface stability of isopropoxy and isopropyl groups, confirming that growth at 573 K is a reaction limited process. (C) 2011 Elsevier B.V. All rights reserved.},
  author       = {Karlsson, P. G. and Richter, J. H. and Andersson, Martin and Johansson, M. K-J. and Blomquist, Jakob and Uvdal, Per and Sandell, A.},
  issn         = {0039-6028},
  keyword      = {Chemical vapor deposition,Synchrotron radiation photoelectron,spectroscopy,X-ray absorption spectroscopy,Scanning tunneling,microscopy,Growth,Titanium dioxide,Low index single crystal,surfaces,Crystalline-amorphous interfaces},
  language     = {eng},
  number       = {13-14},
  pages        = {1147--1156},
  publisher    = {Elsevier},
  series       = {Surface Science},
  title        = {TiO2 chemical vapor deposition on Si(111) in ultrahigh vacuum: Transition from interfacial phase to crystalline phase in the reaction limited regime},
  url          = {http://dx.doi.org/10.1016/j.susc.2011.03.001},
  volume       = {605},
  year         = {2011},
}