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Periodically Changing Morphology of the Growth Interface in Si, Ge, and GaP Nanowires

Wen, C. -Y. ; Tersoff, J. ; Hillerich, Karla LU ; Reuter, M. C. ; Park, J. H. ; Kodambaka, S. ; Stach, E. A. and Ross, F. M. (2011) In Physical Review Letters 107(2).
Abstract
Nanowire growth in the standard < 111 > direction is assumed to occur at a planar catalyst-nanowire interface, but recent reports contradict this picture. Here we show that a nonplanar growth interface is, in fact, a general phenomenon. Both III-V and group IV nanowires show a distinct region at the trijunction with a different orientation whose size oscillates during growth, synchronized with step flow. We develop an explicit model for this structure that agrees well with experiment and shows that the oscillations provide a direct visualization of catalyst supersaturation. We discuss the implications for wire growth and structure.
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author
; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review Letters
volume
107
issue
2
article number
025503
publisher
American Physical Society
external identifiers
  • wos:000292516600021
  • scopus:79961079164
ISSN
1079-7114
DOI
10.1103/PhysRevLett.107.025503
language
English
LU publication?
yes
id
837c7b32-572e-476f-915e-068d9171406b (old id 2092915)
date added to LUP
2016-04-01 09:49:57
date last changed
2021-10-06 04:00:00
@article{837c7b32-572e-476f-915e-068d9171406b,
  abstract     = {Nanowire growth in the standard &lt; 111 &gt; direction is assumed to occur at a planar catalyst-nanowire interface, but recent reports contradict this picture. Here we show that a nonplanar growth interface is, in fact, a general phenomenon. Both III-V and group IV nanowires show a distinct region at the trijunction with a different orientation whose size oscillates during growth, synchronized with step flow. We develop an explicit model for this structure that agrees well with experiment and shows that the oscillations provide a direct visualization of catalyst supersaturation. We discuss the implications for wire growth and structure.},
  author       = {Wen, C. -Y. and Tersoff, J. and Hillerich, Karla and Reuter, M. C. and Park, J. H. and Kodambaka, S. and Stach, E. A. and Ross, F. M.},
  issn         = {1079-7114},
  language     = {eng},
  number       = {2},
  publisher    = {American Physical Society},
  series       = {Physical Review Letters},
  title        = {Periodically Changing Morphology of the Growth Interface in Si, Ge, and GaP Nanowires},
  url          = {http://dx.doi.org/10.1103/PhysRevLett.107.025503},
  doi          = {10.1103/PhysRevLett.107.025503},
  volume       = {107},
  year         = {2011},
}