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Monte Carlo study of non-quasiequilibrium carrier dynamics in III–N LEDs

Kivisaari, Pyry LU ; Sadi, Toufik ; Oksanen, Jani and Tulkki, Jukka (2016) In Optical and Quantum Electronics 48(2).
Abstract

Hot carrier effects have been observed in recent measurements of III–Nitride (III–N) light-emitting diodes. In this paper we carry out bipolar Monte Carlo simulations for electrons and holes in a typical III–N multi-quantum well (MQW) LED. According to our simulations, significant non-quasiequilibrium carrier distributions exist in the barrier layers of the structure. This is observed as average carrier energies much larger than the 1.5kBT corresponding to quasi-equilibrium. Due to the small potential drop over the MQW being modest, the non-quasiequilibrium carriers can be predominantly ascribed to nnp and npp Auger processes taking place in the QWs. Further investigations are needed to determine the effects of hot carriers... (More)

Hot carrier effects have been observed in recent measurements of III–Nitride (III–N) light-emitting diodes. In this paper we carry out bipolar Monte Carlo simulations for electrons and holes in a typical III–N multi-quantum well (MQW) LED. According to our simulations, significant non-quasiequilibrium carrier distributions exist in the barrier layers of the structure. This is observed as average carrier energies much larger than the 1.5kBT corresponding to quasi-equilibrium. Due to the small potential drop over the MQW being modest, the non-quasiequilibrium carriers can be predominantly ascribed to nnp and npp Auger processes taking place in the QWs. Further investigations are needed to determine the effects of hot carriers on the macroscopic device characteristics of real devices.

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author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Hot carriers, III–Nitride LEDs, Monte Carlo simulations, Non-equilibrium hole distribution
in
Optical and Quantum Electronics
volume
48
issue
2
article number
154
pages
6 pages
publisher
Springer
external identifiers
  • scopus:84957593800
ISSN
0306-8919
DOI
10.1007/s11082-016-0406-4
language
English
LU publication?
yes
id
20c89874-402f-48cd-9806-3baa3b3d9710
date added to LUP
2022-03-29 09:38:25
date last changed
2022-03-29 17:05:48
@article{20c89874-402f-48cd-9806-3baa3b3d9710,
  abstract     = {{<p>Hot carrier effects have been observed in recent measurements of III–Nitride (III–N) light-emitting diodes. In this paper we carry out bipolar Monte Carlo simulations for electrons and holes in a typical III–N multi-quantum well (MQW) LED. According to our simulations, significant non-quasiequilibrium carrier distributions exist in the barrier layers of the structure. This is observed as average carrier energies much larger than the 1.5k<sub>B</sub>T corresponding to quasi-equilibrium. Due to the small potential drop over the MQW being modest, the non-quasiequilibrium carriers can be predominantly ascribed to nnp and npp Auger processes taking place in the QWs. Further investigations are needed to determine the effects of hot carriers on the macroscopic device characteristics of real devices.</p>}},
  author       = {{Kivisaari, Pyry and Sadi, Toufik and Oksanen, Jani and Tulkki, Jukka}},
  issn         = {{0306-8919}},
  keywords     = {{Hot carriers; III–Nitride LEDs; Monte Carlo simulations; Non-equilibrium hole distribution}},
  language     = {{eng}},
  month        = {{02}},
  number       = {{2}},
  publisher    = {{Springer}},
  series       = {{Optical and Quantum Electronics}},
  title        = {{Monte Carlo study of non-quasiequilibrium carrier dynamics in III–N LEDs}},
  url          = {{http://dx.doi.org/10.1007/s11082-016-0406-4}},
  doi          = {{10.1007/s11082-016-0406-4}},
  volume       = {{48}},
  year         = {{2016}},
}