Monte Carlo study of non-quasiequilibrium carrier dynamics in III–N LEDs
(2016) In Optical and Quantum Electronics 48(2).- Abstract
Hot carrier effects have been observed in recent measurements of III–Nitride (III–N) light-emitting diodes. In this paper we carry out bipolar Monte Carlo simulations for electrons and holes in a typical III–N multi-quantum well (MQW) LED. According to our simulations, significant non-quasiequilibrium carrier distributions exist in the barrier layers of the structure. This is observed as average carrier energies much larger than the 1.5kBT corresponding to quasi-equilibrium. Due to the small potential drop over the MQW being modest, the non-quasiequilibrium carriers can be predominantly ascribed to nnp and npp Auger processes taking place in the QWs. Further investigations are needed to determine the effects of hot carriers... (More)
Hot carrier effects have been observed in recent measurements of III–Nitride (III–N) light-emitting diodes. In this paper we carry out bipolar Monte Carlo simulations for electrons and holes in a typical III–N multi-quantum well (MQW) LED. According to our simulations, significant non-quasiequilibrium carrier distributions exist in the barrier layers of the structure. This is observed as average carrier energies much larger than the 1.5kBT corresponding to quasi-equilibrium. Due to the small potential drop over the MQW being modest, the non-quasiequilibrium carriers can be predominantly ascribed to nnp and npp Auger processes taking place in the QWs. Further investigations are needed to determine the effects of hot carriers on the macroscopic device characteristics of real devices.
(Less)
- author
- Kivisaari, Pyry LU ; Sadi, Toufik ; Oksanen, Jani and Tulkki, Jukka
- organization
- publishing date
- 2016-02-01
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Hot carriers, III–Nitride LEDs, Monte Carlo simulations, Non-equilibrium hole distribution
- in
- Optical and Quantum Electronics
- volume
- 48
- issue
- 2
- article number
- 154
- pages
- 6 pages
- publisher
- Springer
- external identifiers
-
- scopus:84957593800
- ISSN
- 0306-8919
- DOI
- 10.1007/s11082-016-0406-4
- language
- English
- LU publication?
- yes
- id
- 20c89874-402f-48cd-9806-3baa3b3d9710
- date added to LUP
- 2022-03-29 09:38:25
- date last changed
- 2022-03-29 17:05:48
@article{20c89874-402f-48cd-9806-3baa3b3d9710, abstract = {{<p>Hot carrier effects have been observed in recent measurements of III–Nitride (III–N) light-emitting diodes. In this paper we carry out bipolar Monte Carlo simulations for electrons and holes in a typical III–N multi-quantum well (MQW) LED. According to our simulations, significant non-quasiequilibrium carrier distributions exist in the barrier layers of the structure. This is observed as average carrier energies much larger than the 1.5k<sub>B</sub>T corresponding to quasi-equilibrium. Due to the small potential drop over the MQW being modest, the non-quasiequilibrium carriers can be predominantly ascribed to nnp and npp Auger processes taking place in the QWs. Further investigations are needed to determine the effects of hot carriers on the macroscopic device characteristics of real devices.</p>}}, author = {{Kivisaari, Pyry and Sadi, Toufik and Oksanen, Jani and Tulkki, Jukka}}, issn = {{0306-8919}}, keywords = {{Hot carriers; III–Nitride LEDs; Monte Carlo simulations; Non-equilibrium hole distribution}}, language = {{eng}}, month = {{02}}, number = {{2}}, publisher = {{Springer}}, series = {{Optical and Quantum Electronics}}, title = {{Monte Carlo study of non-quasiequilibrium carrier dynamics in III–N LEDs}}, url = {{http://dx.doi.org/10.1007/s11082-016-0406-4}}, doi = {{10.1007/s11082-016-0406-4}}, volume = {{48}}, year = {{2016}}, }