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VOn (n >= 3) defects in irradiated and heat-treated silicon

Murin, L I; Lindström, Lennart LU ; Svensson, B G; Markevich, V P; Peaker, A R and Londos, C A (2005) In Solid State Phenomena 108-109. p.267-272
Abstract
Local vibrational mode (LVM) spectroscopy has been used to study the evolution of vacancy-oxygen-related defects (VOn) in the temperature range 300-700 degrees C in carbon-lean Cz-Si samples irradiated with MeV electrons or neutrons. New experimental data confirming an attribution of the absorption bands at 910, 976 and 1105 cm(-1) to the VO3 complex are obtained. In particular, a correlated generation of VO3 and the oxygen trimer is observed upon irradiation of CzSi crystals in the temperature range 300-400 degrees C. Strong evidence for the assignment of the bands at 991 and 1014 cm(-1) to a VO4 defect is presented. The lines are found to develop very efficiently in the VO2 containing materials enriched with the oxygen dimer. In such... (More)
Local vibrational mode (LVM) spectroscopy has been used to study the evolution of vacancy-oxygen-related defects (VOn) in the temperature range 300-700 degrees C in carbon-lean Cz-Si samples irradiated with MeV electrons or neutrons. New experimental data confirming an attribution of the absorption bands at 910, 976 and 1105 cm(-1) to the VO3 complex are obtained. In particular, a correlated generation of VO3 and the oxygen trimer is observed upon irradiation of CzSi crystals in the temperature range 300-400 degrees C. Strong evidence for the assignment of the bands at 991 and 1014 cm(-1) to a VO4 defect is presented. The lines are found to develop very efficiently in the VO2 containing materials enriched with the oxygen dimer. In such materials the formation of VO4 is enhanced due to occurrence of the reaction O-2i+VO2 double right arrow VO4. Annealing of the VO3 and VO4 defects at T >= 550C degrees C is found to result in the appearance of new defects giving rise to a number of O-related LVM bands in the range 990-1110 cm(-1). These bands are suggested to axise from VO5 and/or VO6 defects. Similar bands also appear upon the annihilation of oxygen-related thermal double donors at 650 degrees C in Cz-Si crystals pre-annealed at 450 degrees C. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
vibrational modes, vacancy, silicon, oxygen
in
Solid State Phenomena
volume
108-109
pages
267 - 272
publisher
Trans Tech Publications Ltd
external identifiers
  • wos:000234198300042
ISSN
1012-0394
language
English
LU publication?
yes
id
5b376d9a-c8db-401d-9bca-0185e74b60a5 (old id 210257)
date added to LUP
2007-10-05 10:34:09
date last changed
2016-04-16 03:06:57
@article{5b376d9a-c8db-401d-9bca-0185e74b60a5,
  abstract     = {Local vibrational mode (LVM) spectroscopy has been used to study the evolution of vacancy-oxygen-related defects (VOn) in the temperature range 300-700 degrees C in carbon-lean Cz-Si samples irradiated with MeV electrons or neutrons. New experimental data confirming an attribution of the absorption bands at 910, 976 and 1105 cm(-1) to the VO3 complex are obtained. In particular, a correlated generation of VO3 and the oxygen trimer is observed upon irradiation of CzSi crystals in the temperature range 300-400 degrees C. Strong evidence for the assignment of the bands at 991 and 1014 cm(-1) to a VO4 defect is presented. The lines are found to develop very efficiently in the VO2 containing materials enriched with the oxygen dimer. In such materials the formation of VO4 is enhanced due to occurrence of the reaction O-2i+VO2 double right arrow VO4. Annealing of the VO3 and VO4 defects at T >= 550C degrees C is found to result in the appearance of new defects giving rise to a number of O-related LVM bands in the range 990-1110 cm(-1). These bands are suggested to axise from VO5 and/or VO6 defects. Similar bands also appear upon the annihilation of oxygen-related thermal double donors at 650 degrees C in Cz-Si crystals pre-annealed at 450 degrees C.},
  author       = {Murin, L I and Lindström, Lennart and Svensson, B G and Markevich, V P and Peaker, A R and Londos, C A},
  issn         = {1012-0394},
  keyword      = {vibrational modes,vacancy,silicon,oxygen},
  language     = {eng},
  pages        = {267--272},
  publisher    = {Trans Tech Publications Ltd},
  series       = {Solid State Phenomena},
  title        = {VOn (n >= 3) defects in irradiated and heat-treated silicon},
  volume       = {108-109},
  year         = {2005},
}