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High carrier mobility in low band gap polymer-based field-effect transistors

Chen, MX; Crispin, X; Perzon, E; Andersson, MR; Pullerits, Tönu LU ; Andersson, M; Inganas, O and Berggren, M (2005) In Applied Physics Letters 87(25).
Abstract
A conjugated polymer with a low band gap of 1.21 eV, i.e., absorbing infrared light, is demonstrated as active material in field-effect transistors (FETs). The material consists of alternating fluorene units and low band gap segments with electron donor-acceptor-donor units composed of two electron-donating thiophene rings attached on both sides of a thiadiazolo-quinoxaline electron-acceptor group. The polymer is solution-processable and air-stable; the resulting FETs exhibit typical p-channel characteristics and field-effect mobility of 0.03 cm(2) V-1 s(-1).
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
87
issue
25
publisher
American Institute of Physics
external identifiers
  • wos:000234118900044
  • scopus:29144488382
ISSN
0003-6951
DOI
10.1063/1.2142289
language
English
LU publication?
yes
id
1b3bcf27-158e-4449-b4ea-91b086ef4eae (old id 210662)
date added to LUP
2007-08-14 13:10:20
date last changed
2017-01-01 04:31:51
@article{1b3bcf27-158e-4449-b4ea-91b086ef4eae,
  abstract     = {A conjugated polymer with a low band gap of 1.21 eV, i.e., absorbing infrared light, is demonstrated as active material in field-effect transistors (FETs). The material consists of alternating fluorene units and low band gap segments with electron donor-acceptor-donor units composed of two electron-donating thiophene rings attached on both sides of a thiadiazolo-quinoxaline electron-acceptor group. The polymer is solution-processable and air-stable; the resulting FETs exhibit typical p-channel characteristics and field-effect mobility of 0.03 cm(2) V-1 s(-1).},
  author       = {Chen, MX and Crispin, X and Perzon, E and Andersson, MR and Pullerits, Tönu and Andersson, M and Inganas, O and Berggren, M},
  issn         = {0003-6951},
  language     = {eng},
  number       = {25},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {High carrier mobility in low band gap polymer-based field-effect transistors},
  url          = {http://dx.doi.org/10.1063/1.2142289},
  volume       = {87},
  year         = {2005},
}