Large area quasi-free standing monolayer graphene on 3C-SiC(111)
(2011) In Applied Physics Letters 99(8).- Abstract
- Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e., the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by intercalation of hydrogen under the interfacial, (6 root 3 x 6 root 3)R30 degrees-reconstructed carbon layer. After intercalation, angle resolved photoemission spectroscopy reveals sharp linear pi-bands. The decoupling of graphene from the substrate is identified by x-ray photoemission spectroscopy and low energy electron diffraction. Atomic force microscopy and low energy electron microscopy demonstrate that homogeneous monolayer domains extend over areas of hundreds of square-micrometers.... (More)
- Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e., the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by intercalation of hydrogen under the interfacial, (6 root 3 x 6 root 3)R30 degrees-reconstructed carbon layer. After intercalation, angle resolved photoemission spectroscopy reveals sharp linear pi-bands. The decoupling of graphene from the substrate is identified by x-ray photoemission spectroscopy and low energy electron diffraction. Atomic force microscopy and low energy electron microscopy demonstrate that homogeneous monolayer domains extend over areas of hundreds of square-micrometers. (C) 2011 American Institute of Physics. [doi:10.1063/1.3618674] (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2160775
- author
- Coletti, C. ; Emtsev, K. V. ; Zakharov, Alexei LU ; Ouisse, T. ; Chaussende, D. and Starke, U.
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 99
- issue
- 8
- article number
- 081904
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000294359100016
- scopus:80052403985
- ISSN
- 0003-6951
- DOI
- 10.1063/1.3618674
- language
- English
- LU publication?
- yes
- id
- 772dfba6-6eb3-4ddc-b9af-1af381c967e1 (old id 2160775)
- date added to LUP
- 2016-04-01 11:06:57
- date last changed
- 2022-03-27 22:28:40
@article{772dfba6-6eb3-4ddc-b9af-1af381c967e1,
abstract = {{Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e., the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by intercalation of hydrogen under the interfacial, (6 root 3 x 6 root 3)R30 degrees-reconstructed carbon layer. After intercalation, angle resolved photoemission spectroscopy reveals sharp linear pi-bands. The decoupling of graphene from the substrate is identified by x-ray photoemission spectroscopy and low energy electron diffraction. Atomic force microscopy and low energy electron microscopy demonstrate that homogeneous monolayer domains extend over areas of hundreds of square-micrometers. (C) 2011 American Institute of Physics. [doi:10.1063/1.3618674]}},
author = {{Coletti, C. and Emtsev, K. V. and Zakharov, Alexei and Ouisse, T. and Chaussende, D. and Starke, U.}},
issn = {{0003-6951}},
language = {{eng}},
number = {{8}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Letters}},
title = {{Large area quasi-free standing monolayer graphene on 3C-SiC(111)}},
url = {{http://dx.doi.org/10.1063/1.3618674}},
doi = {{10.1063/1.3618674}},
volume = {{99}},
year = {{2011}},
}