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Large area quasi-free standing monolayer graphene on 3C-SiC(111)

Coletti, C. ; Emtsev, K. V. ; Zakharov, Alexei LU ; Ouisse, T. ; Chaussende, D. and Starke, U. (2011) In Applied Physics Letters 99(8).
Abstract
Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e., the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by intercalation of hydrogen under the interfacial, (6 root 3 x 6 root 3)R30 degrees-reconstructed carbon layer. After intercalation, angle resolved photoemission spectroscopy reveals sharp linear pi-bands. The decoupling of graphene from the substrate is identified by x-ray photoemission spectroscopy and low energy electron diffraction. Atomic force microscopy and low energy electron microscopy demonstrate that homogeneous monolayer domains extend over areas of hundreds of square-micrometers.... (More)
Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e., the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by intercalation of hydrogen under the interfacial, (6 root 3 x 6 root 3)R30 degrees-reconstructed carbon layer. After intercalation, angle resolved photoemission spectroscopy reveals sharp linear pi-bands. The decoupling of graphene from the substrate is identified by x-ray photoemission spectroscopy and low energy electron diffraction. Atomic force microscopy and low energy electron microscopy demonstrate that homogeneous monolayer domains extend over areas of hundreds of square-micrometers. (C) 2011 American Institute of Physics. [doi:10.1063/1.3618674] (Less)
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
99
issue
8
article number
081904
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000294359100016
  • scopus:80052403985
ISSN
0003-6951
DOI
10.1063/1.3618674
language
English
LU publication?
yes
id
772dfba6-6eb3-4ddc-b9af-1af381c967e1 (old id 2160775)
date added to LUP
2016-04-01 11:06:57
date last changed
2021-09-29 03:20:18
@article{772dfba6-6eb3-4ddc-b9af-1af381c967e1,
  abstract     = {Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e., the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by intercalation of hydrogen under the interfacial, (6 root 3 x 6 root 3)R30 degrees-reconstructed carbon layer. After intercalation, angle resolved photoemission spectroscopy reveals sharp linear pi-bands. The decoupling of graphene from the substrate is identified by x-ray photoemission spectroscopy and low energy electron diffraction. Atomic force microscopy and low energy electron microscopy demonstrate that homogeneous monolayer domains extend over areas of hundreds of square-micrometers. (C) 2011 American Institute of Physics. [doi:10.1063/1.3618674]},
  author       = {Coletti, C. and Emtsev, K. V. and Zakharov, Alexei and Ouisse, T. and Chaussende, D. and Starke, U.},
  issn         = {0003-6951},
  language     = {eng},
  number       = {8},
  publisher    = {American Institute of Physics (AIP)},
  series       = {Applied Physics Letters},
  title        = {Large area quasi-free standing monolayer graphene on 3C-SiC(111)},
  url          = {http://dx.doi.org/10.1063/1.3618674},
  doi          = {10.1063/1.3618674},
  volume       = {99},
  year         = {2011},
}