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Parameter space mapping of InAs nanowire crystal structure

Dick Thelander, Kimberly LU ; Bolinsson, Jessica LU ; Messing, Maria LU ; Lehmann, Sebastian LU ; Johansson, Jonas LU and Caroff, Philippe LU (2011) In Journal of Vacuum Science and Technology B 29(4).
Abstract
Crystal structure and defects have been shown to have a strong impact on III-V nanowire properties. Recently, it was demonstrated that the issue of random stacking and polytypism in semiconductor nanowires can often be controlled using accessible growth parameters (such as temperature, diameter, and V/III ratio). In addition, it has been shown that crystal phase can be tuned selectively between cubic zinc blende and hexagonal wurtzite within individual nanowires of III-V materials such as InAs. In order for such results to be generally applied to different growth setups, it is necessary to fully explore and understand the trends governing crystal phase dependencies on all accessible growth parameters, including how they relate to each... (More)
Crystal structure and defects have been shown to have a strong impact on III-V nanowire properties. Recently, it was demonstrated that the issue of random stacking and polytypism in semiconductor nanowires can often be controlled using accessible growth parameters (such as temperature, diameter, and V/III ratio). In addition, it has been shown that crystal phase can be tuned selectively between cubic zinc blende and hexagonal wurtzite within individual nanowires of III-V materials such as InAs. In order for such results to be generally applied to different growth setups, it is necessary to fully explore and understand the trends governing crystal phase dependencies on all accessible growth parameters, including how they relate to each other. In this study, the authors have systematically investigated the influence of temperature, diameter, V/III ratio, and total mass flow on the crystal structure of InAs nanowires grown by metal-organic vapor phase epitaxy over a broad parameter range. The authors observed that each of these accessible parameters can affect the resulting crystal structure, and that the trends for each parameter are affected by the magnitude of the others. The authors also noted that most of the parameter dependencies are nonlinear and, in fact, exhibit threshold values at which structure changes discontinuously. By optimizing each of the growth parameters, it is shown that pure ZB or pure WZ phase can be achieved for several different sets of growth conditions. The roles of nucleation kinetics, thermodynamics, and precursor chemistry are also discussed to compare the results to current nanowire growth models. The results in this work should facilitate comparison of data and transfer of knowledge between different growth systems and techniques, which, in turn, should lead to greater understanding of polytypism in nanowires and greater control and freedom in nanowire crystal phase engineering. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3593457] (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
chemical potential, crystal structure, III-V semiconductors, indium, compounds, MOCVD, nanofabrication, nanowires, nucleation, polymorphism, semiconductor growth, vapour phase epitaxial growth
in
Journal of Vacuum Science and Technology B
volume
29
issue
4
publisher
American Institute of Physics
external identifiers
  • wos:000293854800042
  • scopus:80051901082
ISSN
1520-8567
DOI
10.1116/1.3593457
language
English
LU publication?
yes
id
75769c33-70d7-43c3-b996-3c0848d1eaee (old id 2161928)
date added to LUP
2011-09-21 10:55:13
date last changed
2017-08-27 03:24:07
@article{75769c33-70d7-43c3-b996-3c0848d1eaee,
  abstract     = {Crystal structure and defects have been shown to have a strong impact on III-V nanowire properties. Recently, it was demonstrated that the issue of random stacking and polytypism in semiconductor nanowires can often be controlled using accessible growth parameters (such as temperature, diameter, and V/III ratio). In addition, it has been shown that crystal phase can be tuned selectively between cubic zinc blende and hexagonal wurtzite within individual nanowires of III-V materials such as InAs. In order for such results to be generally applied to different growth setups, it is necessary to fully explore and understand the trends governing crystal phase dependencies on all accessible growth parameters, including how they relate to each other. In this study, the authors have systematically investigated the influence of temperature, diameter, V/III ratio, and total mass flow on the crystal structure of InAs nanowires grown by metal-organic vapor phase epitaxy over a broad parameter range. The authors observed that each of these accessible parameters can affect the resulting crystal structure, and that the trends for each parameter are affected by the magnitude of the others. The authors also noted that most of the parameter dependencies are nonlinear and, in fact, exhibit threshold values at which structure changes discontinuously. By optimizing each of the growth parameters, it is shown that pure ZB or pure WZ phase can be achieved for several different sets of growth conditions. The roles of nucleation kinetics, thermodynamics, and precursor chemistry are also discussed to compare the results to current nanowire growth models. The results in this work should facilitate comparison of data and transfer of knowledge between different growth systems and techniques, which, in turn, should lead to greater understanding of polytypism in nanowires and greater control and freedom in nanowire crystal phase engineering. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3593457]},
  articleno    = {04D103},
  author       = {Dick Thelander, Kimberly and Bolinsson, Jessica and Messing, Maria and Lehmann, Sebastian and Johansson, Jonas and Caroff, Philippe},
  issn         = {1520-8567},
  keyword      = {chemical potential,crystal structure,III-V semiconductors,indium,compounds,MOCVD,nanofabrication,nanowires,nucleation,polymorphism,semiconductor growth,vapour phase epitaxial growth},
  language     = {eng},
  number       = {4},
  publisher    = {American Institute of Physics},
  series       = {Journal of Vacuum Science and Technology B},
  title        = {Parameter space mapping of InAs nanowire crystal structure},
  url          = {http://dx.doi.org/10.1116/1.3593457},
  volume       = {29},
  year         = {2011},
}