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Crystal Phases in III-V Nanowires: From Random Toward Engineered Polytypism

Caroff, Philippe LU ; Bolinsson, Jessica LU and Johansson, Jonas LU (2011) In IEEE Journal of Selected Topics in Quantum Electronics 17(4). p.829-846
Abstract
III-V nanowires (NWs) are promising for a wide range of applications, ranging from optics to electronics, energy, and biological sensing. The structural quality of NWs is of paramount importance for the performance of such future NW-based devices. Random structural defects and polytypism occur naturally in semiconductor NWs, but progress both on the theoretical understanding and experimental control have been achieved recently. Here, we review progress towards the realization of perfect wurtzite and zinc-blende phases in III-VNWs, eventually leading to true phase engineering in single NWs.
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organization
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type
Contribution to journal
publication status
published
subject
keywords
Gold-assisted vapor-liquid-solid (VLS) growth, III-V nanowires (NWs), metalorganic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), nucleation kinetics modeling, polytypism, stacking faults (SFs), thermodynamic modeling, twin plane (TP), wurtzite (WZ), zinc blende (ZB)
in
IEEE Journal of Selected Topics in Quantum Electronics
volume
17
issue
4
pages
829 - 846
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000293755500009
  • scopus:80051705411
ISSN
1077-260X
DOI
10.1109/JSTQE.2010.2070790
language
English
LU publication?
yes
id
48cc8cff-c023-4971-900c-75d211437eda (old id 2162954)
date added to LUP
2011-09-21 08:30:44
date last changed
2017-11-05 04:11:41
@article{48cc8cff-c023-4971-900c-75d211437eda,
  abstract     = {III-V nanowires (NWs) are promising for a wide range of applications, ranging from optics to electronics, energy, and biological sensing. The structural quality of NWs is of paramount importance for the performance of such future NW-based devices. Random structural defects and polytypism occur naturally in semiconductor NWs, but progress both on the theoretical understanding and experimental control have been achieved recently. Here, we review progress towards the realization of perfect wurtzite and zinc-blende phases in III-VNWs, eventually leading to true phase engineering in single NWs.},
  author       = {Caroff, Philippe and Bolinsson, Jessica and Johansson, Jonas},
  issn         = {1077-260X},
  keyword      = {Gold-assisted vapor-liquid-solid (VLS) growth,III-V nanowires (NWs),metalorganic vapor phase epitaxy (MOVPE),molecular beam epitaxy (MBE),nucleation kinetics modeling,polytypism,stacking faults (SFs),thermodynamic modeling,twin plane (TP),wurtzite (WZ),zinc blende (ZB)},
  language     = {eng},
  number       = {4},
  pages        = {829--846},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Journal of Selected Topics in Quantum Electronics},
  title        = {Crystal Phases in III-V Nanowires: From Random Toward Engineered Polytypism},
  url          = {http://dx.doi.org/10.1109/JSTQE.2010.2070790},
  volume       = {17},
  year         = {2011},
}