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Characterization of oxygen dimer-enriched silicon detectors

Boisvert, V; Lindström, Lennart LU ; Moll, M; Murin, L I and Pintilie, I (2005) In Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment 552(1-2). p.49-55
Abstract
Various types of silicon material and silicon p(+)n diodes have been treated to increase the concentration of the oxygen dimer (02) defect. This was done by exposing the bulk material and the diodes to 6 MeV electrons at a temperature of about 350 degrees C. FTIR spectroscopy has been performed on the processed material confirming the formation of oxygen dimer defects in Czochralski silicon pieces. We also show results from TSC characterization on processed diodes. Finally, we investigated the influence of the dimer enrichment process on the depletion voltage of silicon diodes and performed 24 GeV/c proton irradiations to study the evolution of the macroscopic diode characteristics as a function of fluence.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
irradiation, electron, oxygen dimer, silicon detector, radiation hardness, FTIR, proton irradiation
in
Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment
volume
552
issue
1-2
pages
49 - 55
publisher
Elsevier
external identifiers
  • wos:000232867600008
  • scopus:26444503139
ISSN
0167-5087
DOI
10.1016/j.nima.2005.06.005
language
English
LU publication?
yes
id
b7af92b1-06e9-4f2f-a9ec-5fb08a2fd7f5 (old id 216455)
date added to LUP
2007-08-07 11:22:52
date last changed
2017-03-12 04:07:14
@article{b7af92b1-06e9-4f2f-a9ec-5fb08a2fd7f5,
  abstract     = {Various types of silicon material and silicon p(+)n diodes have been treated to increase the concentration of the oxygen dimer (02) defect. This was done by exposing the bulk material and the diodes to 6 MeV electrons at a temperature of about 350 degrees C. FTIR spectroscopy has been performed on the processed material confirming the formation of oxygen dimer defects in Czochralski silicon pieces. We also show results from TSC characterization on processed diodes. Finally, we investigated the influence of the dimer enrichment process on the depletion voltage of silicon diodes and performed 24 GeV/c proton irradiations to study the evolution of the macroscopic diode characteristics as a function of fluence.},
  author       = {Boisvert, V and Lindström, Lennart and Moll, M and Murin, L I and Pintilie, I},
  issn         = {0167-5087},
  keyword      = {irradiation,electron,oxygen dimer,silicon detector,radiation hardness,FTIR,proton irradiation},
  language     = {eng},
  number       = {1-2},
  pages        = {49--55},
  publisher    = {Elsevier},
  series       = {Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment},
  title        = {Characterization of oxygen dimer-enriched silicon detectors},
  url          = {http://dx.doi.org/10.1016/j.nima.2005.06.005},
  volume       = {552},
  year         = {2005},
}