Advanced

Large-area homogeneous quasifree standing epitaxial graphene on SiC(0001): Electronic and structural characterization

Forti, S.; Emtsev, K. V.; Coletti, C.; Zakharov, Alexei LU ; Riedl, C. and Starke, U. (2011) In Physical Review B (Condensed Matter and Materials Physics) 84(12).
Abstract
The growth of epitaxial graphene on SiC has been identified as one of the most promising techniques to produce graphene for electronic applications. In this paper, we present a systematic study of the electronic and structural properties of large-area quasifree standing epitaxial monolayer graphene grown on top of the SiC(0001) surface. For this purpose, we combine the thermal treatment of SiC in Ar atmosphere to achieve a homogeneous coverage of the surface with the hydrogen intercalation process, which leads to the removal of the interaction between the substrate and the carbon layer. The band structure in the vicinity of the (K) over bar point is measured using high-resolution angle-resolved photoelectron spectroscopy. A detailed... (More)
The growth of epitaxial graphene on SiC has been identified as one of the most promising techniques to produce graphene for electronic applications. In this paper, we present a systematic study of the electronic and structural properties of large-area quasifree standing epitaxial monolayer graphene grown on top of the SiC(0001) surface. For this purpose, we combine the thermal treatment of SiC in Ar atmosphere to achieve a homogeneous coverage of the surface with the hydrogen intercalation process, which leads to the removal of the interaction between the substrate and the carbon layer. The band structure in the vicinity of the (K) over bar point is measured using high-resolution angle-resolved photoelectron spectroscopy. A detailed analysis of the quasiparticle dynamics reveals a renormalization of the band velocity estimated to about 3% at energies around 200 meV below the Fermi level, which mainly originates from electron-phonon interaction. Further analysis of the momentum distribution curves leads to the formulation of a model for the doping reduction in such a system in the course of sample annealing above 650 degrees C. The uniformity and homogeneity of the graphene is demonstrated by means of low-energy electron microscopy (LEEM). Microphotoelectron spectroscopy data confirm the high structural quality and homogeneity of the quasifree standing graphene. Using LEEM and scanning tunneling microscopy, we demonstrate that the hydrogen desorption at elevated temperatures of approximately 750 degrees C sets in on the graphene terraces rather than via the step edges. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
84
issue
12
publisher
American Physical Society
external identifiers
  • wos:000295484300014
  • scopus:80053921764
ISSN
1098-0121
DOI
10.1103/PhysRevB.84.125449
language
English
LU publication?
yes
id
bfd3d53b-ed84-4c25-b6ac-5590b7280b1c (old id 2179015)
date added to LUP
2011-10-24 15:16:39
date last changed
2017-08-20 04:03:59
@article{bfd3d53b-ed84-4c25-b6ac-5590b7280b1c,
  abstract     = {The growth of epitaxial graphene on SiC has been identified as one of the most promising techniques to produce graphene for electronic applications. In this paper, we present a systematic study of the electronic and structural properties of large-area quasifree standing epitaxial monolayer graphene grown on top of the SiC(0001) surface. For this purpose, we combine the thermal treatment of SiC in Ar atmosphere to achieve a homogeneous coverage of the surface with the hydrogen intercalation process, which leads to the removal of the interaction between the substrate and the carbon layer. The band structure in the vicinity of the (K) over bar point is measured using high-resolution angle-resolved photoelectron spectroscopy. A detailed analysis of the quasiparticle dynamics reveals a renormalization of the band velocity estimated to about 3% at energies around 200 meV below the Fermi level, which mainly originates from electron-phonon interaction. Further analysis of the momentum distribution curves leads to the formulation of a model for the doping reduction in such a system in the course of sample annealing above 650 degrees C. The uniformity and homogeneity of the graphene is demonstrated by means of low-energy electron microscopy (LEEM). Microphotoelectron spectroscopy data confirm the high structural quality and homogeneity of the quasifree standing graphene. Using LEEM and scanning tunneling microscopy, we demonstrate that the hydrogen desorption at elevated temperatures of approximately 750 degrees C sets in on the graphene terraces rather than via the step edges.},
  author       = {Forti, S. and Emtsev, K. V. and Coletti, C. and Zakharov, Alexei and Riedl, C. and Starke, U.},
  issn         = {1098-0121},
  language     = {eng},
  number       = {12},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Large-area homogeneous quasifree standing epitaxial graphene on SiC(0001): Electronic and structural characterization},
  url          = {http://dx.doi.org/10.1103/PhysRevB.84.125449},
  volume       = {84},
  year         = {2011},
}