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Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells

Shang, X. -J.; He, J. -F.; Li, M. -F.; Zhan, F.; Ni, H. -Q.; Niu, Z. -C.; Pettersson, Hans LU and Fu, Y. (2011) In Applied Physics Letters 99(11).
Abstract
Photocurrents (PCs) of three p-i-n GaAs solar cells, sample A with InAs quantum dots (QDs) embedded in the depletion region, B with QDs in the n region, and C without QDs, were studied experimentally and theoretically. Above GaAs bandgap, the PC of A is increased, while B is decreased with respect to C, since in A, the QD-induced reflection of hole wave function increases its overlap with electron wave function so that the optical transition rate is enhanced, while carrier mobility in B is reduced due to QD-induced potential variations. Moreover, A and B have increased PCs in the sub-GaAs-bandgap range due to QD optical absorptions. (C) 2011 American Institute of Physics. [doi:10.1063/1.3638488]
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
99
issue
11
publisher
American Institute of Physics
external identifiers
  • wos:000295034400089
  • scopus:80053190661
ISSN
0003-6951
DOI
10.1063/1.3638488
language
English
LU publication?
yes
id
5ee75b77-33fe-43f1-85df-f781e0952161 (old id 2180264)
date added to LUP
2011-10-25 08:13:23
date last changed
2017-02-05 03:06:40
@article{5ee75b77-33fe-43f1-85df-f781e0952161,
  abstract     = {Photocurrents (PCs) of three p-i-n GaAs solar cells, sample A with InAs quantum dots (QDs) embedded in the depletion region, B with QDs in the n region, and C without QDs, were studied experimentally and theoretically. Above GaAs bandgap, the PC of A is increased, while B is decreased with respect to C, since in A, the QD-induced reflection of hole wave function increases its overlap with electron wave function so that the optical transition rate is enhanced, while carrier mobility in B is reduced due to QD-induced potential variations. Moreover, A and B have increased PCs in the sub-GaAs-bandgap range due to QD optical absorptions. (C) 2011 American Institute of Physics. [doi:10.1063/1.3638488]},
  articleno    = {113514},
  author       = {Shang, X. -J. and He, J. -F. and Li, M. -F. and Zhan, F. and Ni, H. -Q. and Niu, Z. -C. and Pettersson, Hans and Fu, Y.},
  issn         = {0003-6951},
  language     = {eng},
  number       = {11},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells},
  url          = {http://dx.doi.org/10.1063/1.3638488},
  volume       = {99},
  year         = {2011},
}