Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells

Shang, X. -J. ; He, J. -F. ; Li, M. -F. ; Zhan, F. ; Ni, H. -Q. ; Niu, Z. -C. ; Pettersson, Hans LU and Fu, Y. (2011) In Applied Physics Letters 99(11).
Abstract
Photocurrents (PCs) of three p-i-n GaAs solar cells, sample A with InAs quantum dots (QDs) embedded in the depletion region, B with QDs in the n region, and C without QDs, were studied experimentally and theoretically. Above GaAs bandgap, the PC of A is increased, while B is decreased with respect to C, since in A, the QD-induced reflection of hole wave function increases its overlap with electron wave function so that the optical transition rate is enhanced, while carrier mobility in B is reduced due to QD-induced potential variations. Moreover, A and B have increased PCs in the sub-GaAs-bandgap range due to QD optical absorptions. (C) 2011 American Institute of Physics. [doi:10.1063/1.3638488]
Please use this url to cite or link to this publication:
author
; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
99
issue
11
article number
113514
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000295034400089
  • scopus:80053190661
ISSN
0003-6951
DOI
10.1063/1.3638488
language
English
LU publication?
yes
id
5ee75b77-33fe-43f1-85df-f781e0952161 (old id 2180264)
date added to LUP
2016-04-01 10:09:52
date last changed
2022-01-25 20:25:31
@article{5ee75b77-33fe-43f1-85df-f781e0952161,
  abstract     = {{Photocurrents (PCs) of three p-i-n GaAs solar cells, sample A with InAs quantum dots (QDs) embedded in the depletion region, B with QDs in the n region, and C without QDs, were studied experimentally and theoretically. Above GaAs bandgap, the PC of A is increased, while B is decreased with respect to C, since in A, the QD-induced reflection of hole wave function increases its overlap with electron wave function so that the optical transition rate is enhanced, while carrier mobility in B is reduced due to QD-induced potential variations. Moreover, A and B have increased PCs in the sub-GaAs-bandgap range due to QD optical absorptions. (C) 2011 American Institute of Physics. [doi:10.1063/1.3638488]}},
  author       = {{Shang, X. -J. and He, J. -F. and Li, M. -F. and Zhan, F. and Ni, H. -Q. and Niu, Z. -C. and Pettersson, Hans and Fu, Y.}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{11}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells}},
  url          = {{http://dx.doi.org/10.1063/1.3638488}},
  doi          = {{10.1063/1.3638488}},
  volume       = {{99}},
  year         = {{2011}},
}