Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells
(2011) In Applied Physics Letters 99(11).- Abstract
- Photocurrents (PCs) of three p-i-n GaAs solar cells, sample A with InAs quantum dots (QDs) embedded in the depletion region, B with QDs in the n region, and C without QDs, were studied experimentally and theoretically. Above GaAs bandgap, the PC of A is increased, while B is decreased with respect to C, since in A, the QD-induced reflection of hole wave function increases its overlap with electron wave function so that the optical transition rate is enhanced, while carrier mobility in B is reduced due to QD-induced potential variations. Moreover, A and B have increased PCs in the sub-GaAs-bandgap range due to QD optical absorptions. (C) 2011 American Institute of Physics. [doi:10.1063/1.3638488]
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2180264
- author
- Shang, X. -J. ; He, J. -F. ; Li, M. -F. ; Zhan, F. ; Ni, H. -Q. ; Niu, Z. -C. ; Pettersson, Hans LU and Fu, Y.
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 99
- issue
- 11
- article number
- 113514
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000295034400089
- scopus:80053190661
- ISSN
- 0003-6951
- DOI
- 10.1063/1.3638488
- language
- English
- LU publication?
- yes
- id
- 5ee75b77-33fe-43f1-85df-f781e0952161 (old id 2180264)
- date added to LUP
- 2016-04-01 10:09:52
- date last changed
- 2022-01-25 20:25:31
@article{5ee75b77-33fe-43f1-85df-f781e0952161, abstract = {{Photocurrents (PCs) of three p-i-n GaAs solar cells, sample A with InAs quantum dots (QDs) embedded in the depletion region, B with QDs in the n region, and C without QDs, were studied experimentally and theoretically. Above GaAs bandgap, the PC of A is increased, while B is decreased with respect to C, since in A, the QD-induced reflection of hole wave function increases its overlap with electron wave function so that the optical transition rate is enhanced, while carrier mobility in B is reduced due to QD-induced potential variations. Moreover, A and B have increased PCs in the sub-GaAs-bandgap range due to QD optical absorptions. (C) 2011 American Institute of Physics. [doi:10.1063/1.3638488]}}, author = {{Shang, X. -J. and He, J. -F. and Li, M. -F. and Zhan, F. and Ni, H. -Q. and Niu, Z. -C. and Pettersson, Hans and Fu, Y.}}, issn = {{0003-6951}}, language = {{eng}}, number = {{11}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells}}, url = {{http://dx.doi.org/10.1063/1.3638488}}, doi = {{10.1063/1.3638488}}, volume = {{99}}, year = {{2011}}, }