Advanced

Doping of semiconductor nanowires

Wallentin, Jesper LU and Borgström, Magnus LU (2011) In Journal of Materials Research 26(17). p.2142-2156
Abstract
A cornerstone in the successful application of semiconductor nanowire devices is controlled impurity doping. In this review article, we discuss the key results in the field of semiconductor nanowire doping. Considerable development has recently taken place in this field, and half of the references in this review are less than 3 years old. We present a simple model for dopant incorporation during in situ doping of particle-assisted growth of nanowires. The effects of doping on nanowire growth are thoroughly discussed since many investigators have seen much stronger and more complex effects than those observed in thin-film growth. We also give an overview of methods of characterizing doping in nanowires since these in many ways define the... (More)
A cornerstone in the successful application of semiconductor nanowire devices is controlled impurity doping. In this review article, we discuss the key results in the field of semiconductor nanowire doping. Considerable development has recently taken place in this field, and half of the references in this review are less than 3 years old. We present a simple model for dopant incorporation during in situ doping of particle-assisted growth of nanowires. The effects of doping on nanowire growth are thoroughly discussed since many investigators have seen much stronger and more complex effects than those observed in thin-film growth. We also give an overview of methods of characterizing doping in nanowires since these in many ways define the boundaries of our current understanding. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Journal of Materials Research
volume
26
issue
17
pages
2142 - 2156
publisher
Materials Research Society
external identifiers
  • wos:000296083100003
  • scopus:84855732053
ISSN
0884-2914
DOI
10.1557/jmr.2011.214
language
English
LU publication?
yes
id
0e8aaa60-a33d-4d5b-ac28-d97282a615c5 (old id 2208223)
date added to LUP
2011-11-25 16:04:03
date last changed
2017-10-22 04:04:56
@article{0e8aaa60-a33d-4d5b-ac28-d97282a615c5,
  abstract     = {A cornerstone in the successful application of semiconductor nanowire devices is controlled impurity doping. In this review article, we discuss the key results in the field of semiconductor nanowire doping. Considerable development has recently taken place in this field, and half of the references in this review are less than 3 years old. We present a simple model for dopant incorporation during in situ doping of particle-assisted growth of nanowires. The effects of doping on nanowire growth are thoroughly discussed since many investigators have seen much stronger and more complex effects than those observed in thin-film growth. We also give an overview of methods of characterizing doping in nanowires since these in many ways define the boundaries of our current understanding.},
  author       = {Wallentin, Jesper and Borgström, Magnus},
  issn         = {0884-2914},
  language     = {eng},
  number       = {17},
  pages        = {2142--2156},
  publisher    = {Materials Research Society},
  series       = {Journal of Materials Research},
  title        = {Doping of semiconductor nanowires},
  url          = {http://dx.doi.org/10.1557/jmr.2011.214},
  volume       = {26},
  year         = {2011},
}