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The Monte Carlo method applied to carrier transport in Si/SiGe quantum wells

Vettchinkina, Valeria LU ; Blom, Anders LU and Odnoblyudov, M A (2005) In International Journal of Modern Physics B 19(21). p.3353-3377
Abstract
We present a complete Monte Carlo simulation of the transport properties of a Si/SiGe quantum well. The scattering mechanisms, viz. intervalley phonons, acoustic phonons, interface roughness and impurity scattering (including resonant scattering), are considered in detail, and we derive analytic expressions for the scattering rates, in each case properly taking the quantized electron wave functions into account. The numerically obtained distribution function is used to discuss the influence of each scattering mechanism for different electric fields applied parallel to the interfaces and also different temperatures.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
distribution function, electron transport, quantum well, Monte Carlo method, SiGe, scattering, two-dimensional electron gas
in
International Journal of Modern Physics B
volume
19
issue
21
pages
3353 - 3377
publisher
World Scientific
external identifiers
  • wos:000231886100003
  • scopus:24044450881
ISSN
0217-9792
DOI
10.1142/S021797920503222X
language
English
LU publication?
yes
id
68c93b0d-e08f-488a-aa16-b46b414be607 (old id 224148)
date added to LUP
2007-10-05 16:25:44
date last changed
2017-01-01 07:24:13
@article{68c93b0d-e08f-488a-aa16-b46b414be607,
  abstract     = {We present a complete Monte Carlo simulation of the transport properties of a Si/SiGe quantum well. The scattering mechanisms, viz. intervalley phonons, acoustic phonons, interface roughness and impurity scattering (including resonant scattering), are considered in detail, and we derive analytic expressions for the scattering rates, in each case properly taking the quantized electron wave functions into account. The numerically obtained distribution function is used to discuss the influence of each scattering mechanism for different electric fields applied parallel to the interfaces and also different temperatures.},
  author       = {Vettchinkina, Valeria and Blom, Anders and Odnoblyudov, M A},
  issn         = {0217-9792},
  keyword      = {distribution function,electron transport,quantum well,Monte Carlo method,SiGe,scattering,two-dimensional electron gas},
  language     = {eng},
  number       = {21},
  pages        = {3353--3377},
  publisher    = {World Scientific},
  series       = {International Journal of Modern Physics B},
  title        = {The Monte Carlo method applied to carrier transport in Si/SiGe quantum wells},
  url          = {http://dx.doi.org/10.1142/S021797920503222X},
  volume       = {19},
  year         = {2005},
}