Electrical transport properties of InAs nanowires synthesized by a solvothermal method
(2020) In Nanotechnology 31(23).- Abstract
Nanowires are widely considered to be key elements in future disruptive electronics and photonics. This paper presents the first detailed study of transport mechanisms in single-crystalline InAs nanowires synthesized by a cheap solvothermal wet chemical method. From detailed analyses of temperature-dependent current-voltage characteristics, it was observed that contacted nanowires operate in a linear transport regime at biases below a critical cross-over voltage. For larger biases, the transport changes to space-charge-limited conduction assisted by traps. The characteristic parameters such as free electron concentration, trap concentration and energy distribution, and electron mobility were all calculated. It was demonstrated that the... (More)
Nanowires are widely considered to be key elements in future disruptive electronics and photonics. This paper presents the first detailed study of transport mechanisms in single-crystalline InAs nanowires synthesized by a cheap solvothermal wet chemical method. From detailed analyses of temperature-dependent current-voltage characteristics, it was observed that contacted nanowires operate in a linear transport regime at biases below a critical cross-over voltage. For larger biases, the transport changes to space-charge-limited conduction assisted by traps. The characteristic parameters such as free electron concentration, trap concentration and energy distribution, and electron mobility were all calculated. It was demonstrated that the nanowires have key electrical properties comparable to those of InAs nanowires grown by molecular beam epitaxy. Our results might pave the way for cheap disruptive low-dimensional electronics such as resistive switching devices.
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- author
- Devi, Chandni ; Singhal, Rahul ; Silva, Kleber Da ; Paschoal, Waldomiro LU ; Pettersson, Hakan LU and Kumar, Sandeep LU
- organization
- publishing date
- 2020-06-05
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- InAs nanowires, solvothermal growth, space-charge-limited current
- in
- Nanotechnology
- volume
- 31
- issue
- 23
- article number
- 235709
- publisher
- IOP Publishing
- external identifiers
-
- pmid:32084656
- scopus:85082147239
- ISSN
- 0957-4484
- DOI
- 10.1088/1361-6528/ab78ad
- language
- English
- LU publication?
- yes
- id
- 224aab44-0bb1-4204-8001-63e1bd6d4e41
- date added to LUP
- 2020-12-01 16:32:06
- date last changed
- 2024-10-03 13:51:01
@article{224aab44-0bb1-4204-8001-63e1bd6d4e41,
abstract = {{<p>Nanowires are widely considered to be key elements in future disruptive electronics and photonics. This paper presents the first detailed study of transport mechanisms in single-crystalline InAs nanowires synthesized by a cheap solvothermal wet chemical method. From detailed analyses of temperature-dependent current-voltage characteristics, it was observed that contacted nanowires operate in a linear transport regime at biases below a critical cross-over voltage. For larger biases, the transport changes to space-charge-limited conduction assisted by traps. The characteristic parameters such as free electron concentration, trap concentration and energy distribution, and electron mobility were all calculated. It was demonstrated that the nanowires have key electrical properties comparable to those of InAs nanowires grown by molecular beam epitaxy. Our results might pave the way for cheap disruptive low-dimensional electronics such as resistive switching devices.</p>}},
author = {{Devi, Chandni and Singhal, Rahul and Silva, Kleber Da and Paschoal, Waldomiro and Pettersson, Hakan and Kumar, Sandeep}},
issn = {{0957-4484}},
keywords = {{InAs nanowires; solvothermal growth; space-charge-limited current}},
language = {{eng}},
month = {{06}},
number = {{23}},
publisher = {{IOP Publishing}},
series = {{Nanotechnology}},
title = {{Electrical transport properties of InAs nanowires synthesized by a solvothermal method}},
url = {{http://dx.doi.org/10.1088/1361-6528/ab78ad}},
doi = {{10.1088/1361-6528/ab78ad}},
volume = {{31}},
year = {{2020}},
}