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Electrical transport properties of InAs nanowires synthesized by a solvothermal method

Devi, Chandni ; Singhal, Rahul ; Silva, Kleber Da ; Paschoal, Waldomiro LU ; Pettersson, Hakan LU and Kumar, Sandeep LU (2020) In Nanotechnology 31(23).
Abstract

Nanowires are widely considered to be key elements in future disruptive electronics and photonics. This paper presents the first detailed study of transport mechanisms in single-crystalline InAs nanowires synthesized by a cheap solvothermal wet chemical method. From detailed analyses of temperature-dependent current-voltage characteristics, it was observed that contacted nanowires operate in a linear transport regime at biases below a critical cross-over voltage. For larger biases, the transport changes to space-charge-limited conduction assisted by traps. The characteristic parameters such as free electron concentration, trap concentration and energy distribution, and electron mobility were all calculated. It was demonstrated that the... (More)

Nanowires are widely considered to be key elements in future disruptive electronics and photonics. This paper presents the first detailed study of transport mechanisms in single-crystalline InAs nanowires synthesized by a cheap solvothermal wet chemical method. From detailed analyses of temperature-dependent current-voltage characteristics, it was observed that contacted nanowires operate in a linear transport regime at biases below a critical cross-over voltage. For larger biases, the transport changes to space-charge-limited conduction assisted by traps. The characteristic parameters such as free electron concentration, trap concentration and energy distribution, and electron mobility were all calculated. It was demonstrated that the nanowires have key electrical properties comparable to those of InAs nanowires grown by molecular beam epitaxy. Our results might pave the way for cheap disruptive low-dimensional electronics such as resistive switching devices.

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author
; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
InAs nanowires, solvothermal growth, space-charge-limited current
in
Nanotechnology
volume
31
issue
23
article number
235709
publisher
IOP Publishing
external identifiers
  • scopus:85082147239
  • pmid:32084656
ISSN
0957-4484
DOI
10.1088/1361-6528/ab78ad
language
English
LU publication?
yes
id
224aab44-0bb1-4204-8001-63e1bd6d4e41
date added to LUP
2020-12-01 16:32:06
date last changed
2024-07-11 03:44:03
@article{224aab44-0bb1-4204-8001-63e1bd6d4e41,
  abstract     = {{<p>Nanowires are widely considered to be key elements in future disruptive electronics and photonics. This paper presents the first detailed study of transport mechanisms in single-crystalline InAs nanowires synthesized by a cheap solvothermal wet chemical method. From detailed analyses of temperature-dependent current-voltage characteristics, it was observed that contacted nanowires operate in a linear transport regime at biases below a critical cross-over voltage. For larger biases, the transport changes to space-charge-limited conduction assisted by traps. The characteristic parameters such as free electron concentration, trap concentration and energy distribution, and electron mobility were all calculated. It was demonstrated that the nanowires have key electrical properties comparable to those of InAs nanowires grown by molecular beam epitaxy. Our results might pave the way for cheap disruptive low-dimensional electronics such as resistive switching devices.</p>}},
  author       = {{Devi, Chandni and Singhal, Rahul and Silva, Kleber Da and Paschoal, Waldomiro and Pettersson, Hakan and Kumar, Sandeep}},
  issn         = {{0957-4484}},
  keywords     = {{InAs nanowires; solvothermal growth; space-charge-limited current}},
  language     = {{eng}},
  month        = {{06}},
  number       = {{23}},
  publisher    = {{IOP Publishing}},
  series       = {{Nanotechnology}},
  title        = {{Electrical transport properties of InAs nanowires synthesized by a solvothermal method}},
  url          = {{http://dx.doi.org/10.1088/1361-6528/ab78ad}},
  doi          = {{10.1088/1361-6528/ab78ad}},
  volume       = {{31}},
  year         = {{2020}},
}