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Nitrogen-Doped Graphene: Efficient Growth, Structure, and Electronic Properties

Usachov, D.; Vilkov, O.; Grueneis, A.; Haberer, D.; Fedorov, A.; Adamchuk, V. K.; Preobrajenski, Alexei LU ; Dudin, P.; Barinov, A. and Oehzelt, M., et al. (2011) In Nano Letters 11(12). p.5401-5407
Abstract
A novel strategy for efficient growth of nitrogen-doped graphene (N-graphene) on a large scale from s-triazine molecules is presented. The growth process has been unveiled in situ using time-dependent photoemission. It has been established that a postannealing of N-graphene after gold intercalation causes a conversion of the N environment from pyridinic to graphitic, allowing to obtain more than 8096 of all embedded nitrogen in graphitic form, which is essential for the electron doping in graphene. A band gap, a doping level of 300 meV, and a charge-carrier concentration of similar to 8 x 10(12) electrons per cm 2, induced by 0.4 atom % of graphitic nitrogen, have been detected by angle-resolved photoeinission spectroscopy, which offers... (More)
A novel strategy for efficient growth of nitrogen-doped graphene (N-graphene) on a large scale from s-triazine molecules is presented. The growth process has been unveiled in situ using time-dependent photoemission. It has been established that a postannealing of N-graphene after gold intercalation causes a conversion of the N environment from pyridinic to graphitic, allowing to obtain more than 8096 of all embedded nitrogen in graphitic form, which is essential for the electron doping in graphene. A band gap, a doping level of 300 meV, and a charge-carrier concentration of similar to 8 x 10(12) electrons per cm 2, induced by 0.4 atom % of graphitic nitrogen, have been detected by angle-resolved photoeinission spectroscopy, which offers great promise for implementation of this system in next generation electronic devices. (Less)
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Contribution to journal
publication status
published
subject
keywords
Graphene, nitrogen doping, electronic structure, synthesis, triazine, ARPES
in
Nano Letters
volume
11
issue
12
pages
5401 - 5407
publisher
The American Chemical Society
external identifiers
  • wos:000297950200052
  • scopus:83655172551
ISSN
1530-6992
DOI
10.1021/nl2031037
language
English
LU publication?
yes
id
f720bf9e-1b61-4364-bdb6-8ba5e73b3ea7 (old id 2279241)
date added to LUP
2012-01-11 14:47:37
date last changed
2017-11-19 03:58:20
@article{f720bf9e-1b61-4364-bdb6-8ba5e73b3ea7,
  abstract     = {A novel strategy for efficient growth of nitrogen-doped graphene (N-graphene) on a large scale from s-triazine molecules is presented. The growth process has been unveiled in situ using time-dependent photoemission. It has been established that a postannealing of N-graphene after gold intercalation causes a conversion of the N environment from pyridinic to graphitic, allowing to obtain more than 8096 of all embedded nitrogen in graphitic form, which is essential for the electron doping in graphene. A band gap, a doping level of 300 meV, and a charge-carrier concentration of similar to 8 x 10(12) electrons per cm 2, induced by 0.4 atom % of graphitic nitrogen, have been detected by angle-resolved photoeinission spectroscopy, which offers great promise for implementation of this system in next generation electronic devices.},
  author       = {Usachov, D. and Vilkov, O. and Grueneis, A. and Haberer, D. and Fedorov, A. and Adamchuk, V. K. and Preobrajenski, Alexei and Dudin, P. and Barinov, A. and Oehzelt, M. and Laubschat, C. and Vyalikh, D. V.},
  issn         = {1530-6992},
  keyword      = {Graphene,nitrogen doping,electronic structure,synthesis,triazine,ARPES},
  language     = {eng},
  number       = {12},
  pages        = {5401--5407},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Nitrogen-Doped Graphene: Efficient Growth, Structure, and Electronic Properties},
  url          = {http://dx.doi.org/10.1021/nl2031037},
  volume       = {11},
  year         = {2011},
}