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Effect of resonant impurity scattering on the carrier dynamics in Si/SiGe quantum wells

Vettchinkina, Valeria LU ; Blom, Anders LU and Chao, Koung-An LU (2005) In Physical Review B (Condensed Matter and Materials Physics) 72(4).
Abstract
We have performed Monte Carlo simulations of the electron drift velocity in a delta-doped Si/SiGe quantum well, for high and low temperatures as well as strong and weak electric field. All scattering matrix elements of intervalley phonons, acoustic phonons, interface roughness, and impurity ions are calculated from the electron wave functions. Special attention was paid to the resonant state scattering which is far from understood both theoretically and experimentally. When the position of the delta-doped donor layer moves from the center of the quantum well to deep inside the barrier, we found for the first time the dramatic effect of the resonant state scattering on electron drift velocity. This effect is dominated by the resonant level... (More)
We have performed Monte Carlo simulations of the electron drift velocity in a delta-doped Si/SiGe quantum well, for high and low temperatures as well as strong and weak electric field. All scattering matrix elements of intervalley phonons, acoustic phonons, interface roughness, and impurity ions are calculated from the electron wave functions. Special attention was paid to the resonant state scattering which is far from understood both theoretically and experimentally. When the position of the delta-doped donor layer moves from the center of the quantum well to deep inside the barrier, we found for the first time the dramatic effect of the resonant state scattering on electron drift velocity. This effect is dominated by the resonant level broadening, which depends on the position of the delta-doped donor layer. Relative relaxation time of various scattering mechanisms was also derived from the Monte Carlo simulation. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
72
issue
4
publisher
American Physical Society
external identifiers
  • wos:000230890300086
  • scopus:33749233585
ISSN
1098-0121
DOI
10.1103/PhysRevB.72.045303
language
English
LU publication?
yes
id
9ce89f84-f194-4fb2-b0e8-f67208805e88 (old id 231378)
date added to LUP
2007-08-13 10:49:43
date last changed
2017-01-01 06:57:01
@article{9ce89f84-f194-4fb2-b0e8-f67208805e88,
  abstract     = {We have performed Monte Carlo simulations of the electron drift velocity in a delta-doped Si/SiGe quantum well, for high and low temperatures as well as strong and weak electric field. All scattering matrix elements of intervalley phonons, acoustic phonons, interface roughness, and impurity ions are calculated from the electron wave functions. Special attention was paid to the resonant state scattering which is far from understood both theoretically and experimentally. When the position of the delta-doped donor layer moves from the center of the quantum well to deep inside the barrier, we found for the first time the dramatic effect of the resonant state scattering on electron drift velocity. This effect is dominated by the resonant level broadening, which depends on the position of the delta-doped donor layer. Relative relaxation time of various scattering mechanisms was also derived from the Monte Carlo simulation.},
  author       = {Vettchinkina, Valeria and Blom, Anders and Chao, Koung-An},
  issn         = {1098-0121},
  language     = {eng},
  number       = {4},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Effect of resonant impurity scattering on the carrier dynamics in Si/SiGe quantum wells},
  url          = {http://dx.doi.org/10.1103/PhysRevB.72.045303},
  volume       = {72},
  year         = {2005},
}