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Thermal double donor annihilation and oxygen precipitation at around 650 degrees C in Czochralski-grown Si: local vibrational mode studies

Murin, L I; Lindström, Lennart LU ; Markevich, V P; Misiuk, A and Londos, C A (2005) In Journal of Physics: Condensed Matter 17(22). p.2237-2246
Abstract
We have used local vibrational mode (LVM) spectroscopy to monitor the formation of oxygen-related thermal double donors (TDDs) at 45 0 degrees C and their annihilation at 650 degrees C in carbon-lean Czochralski-grown (Cz-) Si crystals. A few samples were treated at 650 degrees C under high hydrostatic pressure. It is found that the annihilation of TDDs at 650 degrees C results not only in a partial recovery of the interstitial oxygen, but also in the appearance of a number of new O-related LVM bands in the range 990-1110 cm(-1). The positions of these lines and their shapes are identical to those observed for Cz-Si irradiated with electrons or neutrons and annealed at 600-700 degrees C. Since the lines appear upon annealing out of VO3 and... (More)
We have used local vibrational mode (LVM) spectroscopy to monitor the formation of oxygen-related thermal double donors (TDDs) at 45 0 degrees C and their annihilation at 650 degrees C in carbon-lean Czochralski-grown (Cz-) Si crystals. A few samples were treated at 650 degrees C under high hydrostatic pressure. It is found that the annihilation of TDDs at 650 degrees C results not only in a partial recovery of the interstitial oxygen, but also in the appearance of a number of new O-related LVM bands in the range 990-1110 cm(-1). The positions of these lines and their shapes are identical to those observed for Cz-Si irradiated with electrons or neutrons and annealed at 600-700 degrees C. Since the lines appear upon annealing out of VO3 and VO4 defects in irradiated samples, they are suggested to arise from VOm (m > 4) complexes. In both kinds of samples, pre-annealed and preirradiated, the new LVM bands disappear upon prolonged annealing at 650 degrees C while enhanced oxygen precipitation occurs. The VOm defects are suggested to serve as nuclei for oxygen precipitates developing at around 650 degrees C. High hydrostatic pressure is found to enhance further (up to 4-5 times) the oxygen precipitation process at 650 degrees C in the samples pre-annealed at 450 degrees C. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Journal of Physics: Condensed Matter
volume
17
issue
22
pages
2237 - 2246
publisher
IOP Publishing
external identifiers
  • wos:000230663100012
  • scopus:21144437613
ISSN
1361-648X
DOI
10.1088/0953-8984/17/22/011
language
English
LU publication?
yes
id
1ce14a71-994f-4bc1-9678-eb34be403910 (old id 231993)
date added to LUP
2007-10-05 10:37:11
date last changed
2017-10-08 04:17:16
@article{1ce14a71-994f-4bc1-9678-eb34be403910,
  abstract     = {We have used local vibrational mode (LVM) spectroscopy to monitor the formation of oxygen-related thermal double donors (TDDs) at 45 0 degrees C and their annihilation at 650 degrees C in carbon-lean Czochralski-grown (Cz-) Si crystals. A few samples were treated at 650 degrees C under high hydrostatic pressure. It is found that the annihilation of TDDs at 650 degrees C results not only in a partial recovery of the interstitial oxygen, but also in the appearance of a number of new O-related LVM bands in the range 990-1110 cm(-1). The positions of these lines and their shapes are identical to those observed for Cz-Si irradiated with electrons or neutrons and annealed at 600-700 degrees C. Since the lines appear upon annealing out of VO3 and VO4 defects in irradiated samples, they are suggested to arise from VOm (m > 4) complexes. In both kinds of samples, pre-annealed and preirradiated, the new LVM bands disappear upon prolonged annealing at 650 degrees C while enhanced oxygen precipitation occurs. The VOm defects are suggested to serve as nuclei for oxygen precipitates developing at around 650 degrees C. High hydrostatic pressure is found to enhance further (up to 4-5 times) the oxygen precipitation process at 650 degrees C in the samples pre-annealed at 450 degrees C.},
  author       = {Murin, L I and Lindström, Lennart and Markevich, V P and Misiuk, A and Londos, C A},
  issn         = {1361-648X},
  language     = {eng},
  number       = {22},
  pages        = {2237--2246},
  publisher    = {IOP Publishing},
  series       = {Journal of Physics: Condensed Matter},
  title        = {Thermal double donor annihilation and oxygen precipitation at around 650 degrees C in Czochralski-grown Si: local vibrational mode studies},
  url          = {http://dx.doi.org/10.1088/0953-8984/17/22/011},
  volume       = {17},
  year         = {2005},
}