Advanced

Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry

Forsen, E; Abadal, G; Ghatnekar-Nilsson, Sara LU ; Teva, J; Verd, J; Sandberg, R; Svendsen, W; Perez-Murano, F; Esteve, J and Figueras, E, et al. (2005) In Applied Physics Letters 87(4).
Abstract
Nanomechanical resonators have been monolithically integrated on preprocessed complementary metal-oxide-semiconductor (CMOS) chips. Fabricated resonator systems have been designed to have resonance frequencies up to 1.5 MHz. The systems have been characterized in ambient air and vacuum conditions and display ultrasensitive mass detection in air. A mass sensitivity of 4 ag/Hz has been determined in air by placing a single glycerine drop, having a measured weight of 57 fg, at the apex of a cantilever and subsequently measuring a frequency shift of 14.8 kHz. CMOS integration enables electrostatic excitation, capacitive detection, and amplification of the resonance signal directly on the chip.
Please use this url to cite or link to this publication:
author
, et al. (More)
(Less)
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
87
issue
4
publisher
American Institute of Physics
external identifiers
  • wos:000230725900069
  • scopus:23744456430
ISSN
0003-6951
DOI
10.1063/1.1999838
language
English
LU publication?
yes
id
f93583b9-6969-4745-af28-80f1630e14dc (old id 232196)
date added to LUP
2007-09-21 14:43:49
date last changed
2017-10-01 03:49:25
@article{f93583b9-6969-4745-af28-80f1630e14dc,
  abstract     = {Nanomechanical resonators have been monolithically integrated on preprocessed complementary metal-oxide-semiconductor (CMOS) chips. Fabricated resonator systems have been designed to have resonance frequencies up to 1.5 MHz. The systems have been characterized in ambient air and vacuum conditions and display ultrasensitive mass detection in air. A mass sensitivity of 4 ag/Hz has been determined in air by placing a single glycerine drop, having a measured weight of 57 fg, at the apex of a cantilever and subsequently measuring a frequency shift of 14.8 kHz. CMOS integration enables electrostatic excitation, capacitive detection, and amplification of the resonance signal directly on the chip.},
  articleno    = {043507},
  author       = {Forsen, E and Abadal, G and Ghatnekar-Nilsson, Sara and Teva, J and Verd, J and Sandberg, R and Svendsen, W and Perez-Murano, F and Esteve, J and Figueras, E and Campabadal, F and Montelius, Lars and Barniol, N and Boisen, A},
  issn         = {0003-6951},
  language     = {eng},
  number       = {4},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry},
  url          = {http://dx.doi.org/10.1063/1.1999838},
  volume       = {87},
  year         = {2005},
}