Time-resolved photoluminescence studies of single interface wurtzite/zincblende heterostructured InP nanowires
Jash, Asmita LU ; Yangui, Aymen LU ; Lehmann, Sebastian LU ; Scheblykin, Ivan G. LU
; Dick, Kimberly A.
LU
; Gustafsson, Anders
LU
and Pistol, Mats-erik
LU
(2022)
In Applied Physics Letters
120(11).
- Abstract
- The interface between wurtzite and zinc blende InP has been identified as type-II, where electrons gather on the zinc blende side and holes on the wurtzite side of the interface. The photoluminescence resulting from recombination across the interface is expected to be long-lived and to exhibit non-exponential decay of emission intensity after pulsed excitation. We verify this prediction using time-resolved photoluminescence spectroscopy on nanowires containing a single heterostructure between a single segment of wurtzite and zinc blende. We find that a significant intensity of type-II emission remains even more than 30 ns after excitation. The decay of the emission intensity is also non-exponential and considerably longer than the... (More)
- The interface between wurtzite and zinc blende InP has been identified as type-II, where electrons gather on the zinc blende side and holes on the wurtzite side of the interface. The photoluminescence resulting from recombination across the interface is expected to be long-lived and to exhibit non-exponential decay of emission intensity after pulsed excitation. We verify this prediction using time-resolved photoluminescence spectroscopy on nanowires containing a single heterostructure between a single segment of wurtzite and zinc blende. We find that a significant intensity of type-II emission remains even more than 30 ns after excitation. The decay of the emission intensity is also non-exponential and considerably longer than the exponential decay of the wurtzite InP segment (260 ps). Our results are consistent with the expected photoluminescence characteristics of a type-II interface between the two polytypes. We also find that the lifetime becomes shorter if we create an electron gas at the interface by n-type doping the entire wurtzite segment of the nanowire. This is expected since there are many electrons that a given hole can recombine with, in contrast to the undoped case. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/232b0b02-7f5f-426e-90b3-e249ec4098f6
- author
- Jash, Asmita
LU
; Yangui, Aymen
LU
; Lehmann, Sebastian
LU
; Scheblykin, Ivan G.
LU
; Dick, Kimberly A.
LU
; Gustafsson, Anders
LU
and Pistol, Mats-erik
LU
- organization
- publishing date
- 2022-03-14
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 120
- issue
- 11
- article number
- 113102
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- scopus:85127034172
- ISSN
- 0003-6951
- DOI
- 10.1063/5.0083159
- language
- English
- LU publication?
- yes
- id
- 232b0b02-7f5f-426e-90b3-e249ec4098f6
- alternative location
- https://aip.scitation.org/doi/10.1063/5.0083159
- date added to LUP
- 2022-03-28 19:49:07
- date last changed
- 2024-02-17 21:56:08
@article{232b0b02-7f5f-426e-90b3-e249ec4098f6,
abstract = {{The interface between wurtzite and zinc blende InP has been identified as type-II, where electrons gather on the zinc blende side and holes on the wurtzite side of the interface. The photoluminescence resulting from recombination across the interface is expected to be long-lived and to exhibit non-exponential decay of emission intensity after pulsed excitation. We verify this prediction using time-resolved photoluminescence spectroscopy on nanowires containing a single heterostructure between a single segment of wurtzite and zinc blende. We find that a significant intensity of type-II emission remains even more than 30 ns after excitation. The decay of the emission intensity is also non-exponential and considerably longer than the exponential decay of the wurtzite InP segment (260 ps). Our results are consistent with the expected photoluminescence characteristics of a type-II interface between the two polytypes. We also find that the lifetime becomes shorter if we create an electron gas at the interface by n-type doping the entire wurtzite segment of the nanowire. This is expected since there are many electrons that a given hole can recombine with, in contrast to the undoped case.}},
author = {{Jash, Asmita and Yangui, Aymen and Lehmann, Sebastian and Scheblykin, Ivan G. and Dick, Kimberly A. and Gustafsson, Anders and Pistol, Mats-erik}},
issn = {{0003-6951}},
language = {{eng}},
month = {{03}},
number = {{11}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Letters}},
title = {{Time-resolved photoluminescence studies of single interface wurtzite/zincblende heterostructured InP nanowires}},
url = {{http://dx.doi.org/10.1063/5.0083159}},
doi = {{10.1063/5.0083159}},
volume = {{120}},
year = {{2022}},
}