Generation of spin current and polarization under dynamic gate control of spin-orbit interaction in low-dimensional semiconductor systems
(2005) In Physical Review B (Condensed Matter and Materials Physics) 71(19).- Abstract
- Based on the Keldysh formalism, the Boltzmann kinetic equation and the drift-diffusion equation have been derived for studying spin-polarization flow and spin accumulation under effect of the time-dependent Rashba spin-orbit interaction in a semiconductor quantum well. The time-dependent Rashba interaction is provided by time-dependent electric gates of appropriate shapes. Several examples of spin manipulation by gates have been considered. Mechanisms and conditions for obtaining the stationary spin density and the induced rectified dc spin current are studied.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/233316
- author
- Tang, CS ; Mal'shukov, AG and Chao, Koung-An LU
- organization
- publishing date
- 2005
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 71
- issue
- 19
- publisher
- American Physical Society
- external identifiers
-
- wos:000230244100074
- scopus:28544452053
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.71.195314
- language
- English
- LU publication?
- yes
- id
- 2e8acd02-8499-4202-829c-22ee051f72c4 (old id 233316)
- date added to LUP
- 2016-04-01 16:26:02
- date last changed
- 2022-04-15 04:28:38
@article{2e8acd02-8499-4202-829c-22ee051f72c4, abstract = {{Based on the Keldysh formalism, the Boltzmann kinetic equation and the drift-diffusion equation have been derived for studying spin-polarization flow and spin accumulation under effect of the time-dependent Rashba spin-orbit interaction in a semiconductor quantum well. The time-dependent Rashba interaction is provided by time-dependent electric gates of appropriate shapes. Several examples of spin manipulation by gates have been considered. Mechanisms and conditions for obtaining the stationary spin density and the induced rectified dc spin current are studied.}}, author = {{Tang, CS and Mal'shukov, AG and Chao, Koung-An}}, issn = {{1098-0121}}, language = {{eng}}, number = {{19}}, publisher = {{American Physical Society}}, series = {{Physical Review B (Condensed Matter and Materials Physics)}}, title = {{Generation of spin current and polarization under dynamic gate control of spin-orbit interaction in low-dimensional semiconductor systems}}, url = {{http://dx.doi.org/10.1103/PhysRevB.71.195314}}, doi = {{10.1103/PhysRevB.71.195314}}, volume = {{71}}, year = {{2005}}, }