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Generation of spin current and polarization under dynamic gate control of spin-orbit interaction in low-dimensional semiconductor systems

Tang, CS; Mal'shukov, AG and Chao, Koung-An LU (2005) In Physical Review B (Condensed Matter and Materials Physics) 71(19).
Abstract
Based on the Keldysh formalism, the Boltzmann kinetic equation and the drift-diffusion equation have been derived for studying spin-polarization flow and spin accumulation under effect of the time-dependent Rashba spin-orbit interaction in a semiconductor quantum well. The time-dependent Rashba interaction is provided by time-dependent electric gates of appropriate shapes. Several examples of spin manipulation by gates have been considered. Mechanisms and conditions for obtaining the stationary spin density and the induced rectified dc spin current are studied.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
71
issue
19
publisher
American Physical Society
external identifiers
  • wos:000230244100074
  • scopus:28544452053
ISSN
1098-0121
DOI
10.1103/PhysRevB.71.195314
language
English
LU publication?
yes
id
2e8acd02-8499-4202-829c-22ee051f72c4 (old id 233316)
date added to LUP
2007-08-14 11:01:43
date last changed
2017-04-09 04:20:15
@article{2e8acd02-8499-4202-829c-22ee051f72c4,
  abstract     = {Based on the Keldysh formalism, the Boltzmann kinetic equation and the drift-diffusion equation have been derived for studying spin-polarization flow and spin accumulation under effect of the time-dependent Rashba spin-orbit interaction in a semiconductor quantum well. The time-dependent Rashba interaction is provided by time-dependent electric gates of appropriate shapes. Several examples of spin manipulation by gates have been considered. Mechanisms and conditions for obtaining the stationary spin density and the induced rectified dc spin current are studied.},
  author       = {Tang, CS and Mal'shukov, AG and Chao, Koung-An},
  issn         = {1098-0121},
  language     = {eng},
  number       = {19},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Generation of spin current and polarization under dynamic gate control of spin-orbit interaction in low-dimensional semiconductor systems},
  url          = {http://dx.doi.org/10.1103/PhysRevB.71.195314},
  volume       = {71},
  year         = {2005},
}