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Schottky barriers in carbon nanotube-metal contacts

Svensson, Johannes LU and Campbell, Eleanor E. B. (2011) In Applied Physics Reviews 110(11).
Abstract
Semiconducting carbon nanotubes (CNTs) have several properties that are advantageous for field effect transistors such as high mobility, good electrostatics due to their small diameter allowing for aggressive gate length scaling and capability to withstand high current densities. However, in spite of the exceptional performance of single transistors only a few simple circuits and logic gates using CNTs have been demonstrated so far. One of the major obstacles for large scale integration of CNTs is to reliably fabricate p-type and n-type ohmic contacts. To achieve this, the nature of Schottky barriers that often form between metals and small diameter CNTs has to be fully understood. However, since experimental techniques commonly used to... (More)
Semiconducting carbon nanotubes (CNTs) have several properties that are advantageous for field effect transistors such as high mobility, good electrostatics due to their small diameter allowing for aggressive gate length scaling and capability to withstand high current densities. However, in spite of the exceptional performance of single transistors only a few simple circuits and logic gates using CNTs have been demonstrated so far. One of the major obstacles for large scale integration of CNTs is to reliably fabricate p-type and n-type ohmic contacts. To achieve this, the nature of Schottky barriers that often form between metals and small diameter CNTs has to be fully understood. However, since experimental techniques commonly used to study contacts to bulk materials cannot be exploited and studies often have been performed on only single or a few devices there is a large discrepancy in the Schottky barrier heights reported and also several contradicting conclusions. This paper presents a comprehensive review of both theoretical and experimental results on CNT-metal contacts. The main focus is on comparisons between theoretical predictions and experimental results and identifying what needs to be done to gain further understanding of Schottky barriers in CNT-metal contacts. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3664139] (Less)
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in
Applied Physics Reviews
volume
110
issue
11
publisher
American Institute of Physics
external identifiers
  • wos:000298254800001
  • scopus:84858435155
ISSN
0021-8979
DOI
10.1063/1.3664139
language
English
LU publication?
yes
id
d0c5d828-7069-42e7-a3be-91c7abc7b198 (old id 2333335)
date added to LUP
2012-02-06 13:39:29
date last changed
2017-10-08 03:12:04
@article{d0c5d828-7069-42e7-a3be-91c7abc7b198,
  abstract     = {Semiconducting carbon nanotubes (CNTs) have several properties that are advantageous for field effect transistors such as high mobility, good electrostatics due to their small diameter allowing for aggressive gate length scaling and capability to withstand high current densities. However, in spite of the exceptional performance of single transistors only a few simple circuits and logic gates using CNTs have been demonstrated so far. One of the major obstacles for large scale integration of CNTs is to reliably fabricate p-type and n-type ohmic contacts. To achieve this, the nature of Schottky barriers that often form between metals and small diameter CNTs has to be fully understood. However, since experimental techniques commonly used to study contacts to bulk materials cannot be exploited and studies often have been performed on only single or a few devices there is a large discrepancy in the Schottky barrier heights reported and also several contradicting conclusions. This paper presents a comprehensive review of both theoretical and experimental results on CNT-metal contacts. The main focus is on comparisons between theoretical predictions and experimental results and identifying what needs to be done to gain further understanding of Schottky barriers in CNT-metal contacts. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3664139]},
  articleno    = {111101},
  author       = {Svensson, Johannes and Campbell, Eleanor E. B.},
  issn         = {0021-8979},
  language     = {eng},
  number       = {11},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Reviews},
  title        = {Schottky barriers in carbon nanotube-metal contacts},
  url          = {http://dx.doi.org/10.1063/1.3664139},
  volume       = {110},
  year         = {2011},
}