Electrical properties and logic function of multibranch junction structures
(2005) In Applied Physics Letters 86(25).- Abstract
- We report on room-temperature electrical measurements of multibranch junction (MBJ) devices made from a semiconductor heterostructure. We show that the MBJ devices exhibit an interesting electrical property. If the voltage output at one branch is measured as a function of the voltages inputs to all the other branches, the output voltage is determined predominately by the most negative, or the lowest, voltage applied. The property arises from the nature of the voltage-induced ballistic electron transport in the MBJ device, and can in general be observed in other nanoscale MBJ structures. We also demonstrate the realization of very compact multi-input logic gates with the MBJ structures.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/235919
- author
- Wallin, Daniel LU and Xu, Hongqi LU
- organization
- publishing date
- 2005
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 86
- issue
- 25
- article number
- 253515
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000229858300068
- scopus:24344490314
- ISSN
- 0003-6951
- DOI
- 10.1063/1.1952579
- language
- English
- LU publication?
- yes
- id
- 1289a125-90a1-432d-b5e3-f8c71aafd392 (old id 235919)
- date added to LUP
- 2016-04-01 12:07:09
- date last changed
- 2022-01-26 23:03:02
@article{1289a125-90a1-432d-b5e3-f8c71aafd392, abstract = {{We report on room-temperature electrical measurements of multibranch junction (MBJ) devices made from a semiconductor heterostructure. We show that the MBJ devices exhibit an interesting electrical property. If the voltage output at one branch is measured as a function of the voltages inputs to all the other branches, the output voltage is determined predominately by the most negative, or the lowest, voltage applied. The property arises from the nature of the voltage-induced ballistic electron transport in the MBJ device, and can in general be observed in other nanoscale MBJ structures. We also demonstrate the realization of very compact multi-input logic gates with the MBJ structures.}}, author = {{Wallin, Daniel and Xu, Hongqi}}, issn = {{0003-6951}}, language = {{eng}}, number = {{25}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Electrical properties and logic function of multibranch junction structures}}, url = {{http://dx.doi.org/10.1063/1.1952579}}, doi = {{10.1063/1.1952579}}, volume = {{86}}, year = {{2005}}, }