Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques
(2012) In Nanotechnology 23(9).- Abstract
- III-V antimonide nanowires are among the most interesting semiconductors for transport physics, nanoelectronics and long-wavelength optoelectronic devices due to their optimal material properties. In order to investigate their complex crystal structure evolution, faceting and composition, we report a combined scanning electron microscopy (SEM), transmission electron microscopy (TEM), and scanning tunneling microscopy (STM) study of gold-nucleated ternary InAs/InAs1-xSbx nanowire heterostructures grown by molecular beam epitaxy. SEM showed the general morphology and faceting, TEM revealed the internal crystal structure and ternary compositions, while STM was successfully applied to characterize the oxide-free nanowire sidewalls, in terms of... (More)
- III-V antimonide nanowires are among the most interesting semiconductors for transport physics, nanoelectronics and long-wavelength optoelectronic devices due to their optimal material properties. In order to investigate their complex crystal structure evolution, faceting and composition, we report a combined scanning electron microscopy (SEM), transmission electron microscopy (TEM), and scanning tunneling microscopy (STM) study of gold-nucleated ternary InAs/InAs1-xSbx nanowire heterostructures grown by molecular beam epitaxy. SEM showed the general morphology and faceting, TEM revealed the internal crystal structure and ternary compositions, while STM was successfully applied to characterize the oxide-free nanowire sidewalls, in terms of nanofaceting morphology, atomic structure and surface composition. The complementary use of these techniques allows for correlation of the morphological and structural properties of the nanowires with the amount of Sb incorporated during growth. The addition of even a minute amount of Sb to InAs changes the crystal structure from perfect wurtzite to perfect zinc blende, via intermediate stacking fault and pseudo-periodic twinning regimes. Moreover, the addition of Sb during the axial growth of InAs/InAs1-xSbx heterostructure nanowires causes a significant conformal lateral overgrowth on both segments, leading to the spontaneous formation of a core-shell structure, with an Sb-rich shell. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2390723
- author
- Xu, Tao ; Dick Thelander, Kimberly LU ; Plissard, Sebastien ; Nguyen, Thanh Hai ; Makoudi, Younes ; Berthe, Maxime ; Nys, Jean-Philippe ; Wallart, Xavier ; Grandidier, Bruno and Caroff, Philippe
- organization
- publishing date
- 2012
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanotechnology
- volume
- 23
- issue
- 9
- article number
- 095702
- publisher
- IOP Publishing
- external identifiers
-
- wos:000300605600017
- scopus:84857418039
- ISSN
- 0957-4484
- DOI
- 10.1088/0957-4484/23/9/095702
- language
- English
- LU publication?
- yes
- id
- 6b2a2c1d-3a82-4ed9-b9c1-6e4a7792fb06 (old id 2390723)
- date added to LUP
- 2016-04-01 11:00:28
- date last changed
- 2023-11-10 10:37:29
@article{6b2a2c1d-3a82-4ed9-b9c1-6e4a7792fb06,
abstract = {{III-V antimonide nanowires are among the most interesting semiconductors for transport physics, nanoelectronics and long-wavelength optoelectronic devices due to their optimal material properties. In order to investigate their complex crystal structure evolution, faceting and composition, we report a combined scanning electron microscopy (SEM), transmission electron microscopy (TEM), and scanning tunneling microscopy (STM) study of gold-nucleated ternary InAs/InAs1-xSbx nanowire heterostructures grown by molecular beam epitaxy. SEM showed the general morphology and faceting, TEM revealed the internal crystal structure and ternary compositions, while STM was successfully applied to characterize the oxide-free nanowire sidewalls, in terms of nanofaceting morphology, atomic structure and surface composition. The complementary use of these techniques allows for correlation of the morphological and structural properties of the nanowires with the amount of Sb incorporated during growth. The addition of even a minute amount of Sb to InAs changes the crystal structure from perfect wurtzite to perfect zinc blende, via intermediate stacking fault and pseudo-periodic twinning regimes. Moreover, the addition of Sb during the axial growth of InAs/InAs1-xSbx heterostructure nanowires causes a significant conformal lateral overgrowth on both segments, leading to the spontaneous formation of a core-shell structure, with an Sb-rich shell.}},
author = {{Xu, Tao and Dick Thelander, Kimberly and Plissard, Sebastien and Nguyen, Thanh Hai and Makoudi, Younes and Berthe, Maxime and Nys, Jean-Philippe and Wallart, Xavier and Grandidier, Bruno and Caroff, Philippe}},
issn = {{0957-4484}},
language = {{eng}},
number = {{9}},
publisher = {{IOP Publishing}},
series = {{Nanotechnology}},
title = {{Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques}},
url = {{http://dx.doi.org/10.1088/0957-4484/23/9/095702}},
doi = {{10.1088/0957-4484/23/9/095702}},
volume = {{23}},
year = {{2012}},
}