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Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques

Xu, Tao; Dick Thelander, Kimberly LU ; Plissard, Sebastien; Nguyen, Thanh Hai; Makoudi, Younes; Berthe, Maxime; Nys, Jean-Philippe; Wallart, Xavier; Grandidier, Bruno and Caroff, Philippe (2012) In Nanotechnology 23(9).
Abstract
III-V antimonide nanowires are among the most interesting semiconductors for transport physics, nanoelectronics and long-wavelength optoelectronic devices due to their optimal material properties. In order to investigate their complex crystal structure evolution, faceting and composition, we report a combined scanning electron microscopy (SEM), transmission electron microscopy (TEM), and scanning tunneling microscopy (STM) study of gold-nucleated ternary InAs/InAs1-xSbx nanowire heterostructures grown by molecular beam epitaxy. SEM showed the general morphology and faceting, TEM revealed the internal crystal structure and ternary compositions, while STM was successfully applied to characterize the oxide-free nanowire sidewalls, in terms of... (More)
III-V antimonide nanowires are among the most interesting semiconductors for transport physics, nanoelectronics and long-wavelength optoelectronic devices due to their optimal material properties. In order to investigate their complex crystal structure evolution, faceting and composition, we report a combined scanning electron microscopy (SEM), transmission electron microscopy (TEM), and scanning tunneling microscopy (STM) study of gold-nucleated ternary InAs/InAs1-xSbx nanowire heterostructures grown by molecular beam epitaxy. SEM showed the general morphology and faceting, TEM revealed the internal crystal structure and ternary compositions, while STM was successfully applied to characterize the oxide-free nanowire sidewalls, in terms of nanofaceting morphology, atomic structure and surface composition. The complementary use of these techniques allows for correlation of the morphological and structural properties of the nanowires with the amount of Sb incorporated during growth. The addition of even a minute amount of Sb to InAs changes the crystal structure from perfect wurtzite to perfect zinc blende, via intermediate stacking fault and pseudo-periodic twinning regimes. Moreover, the addition of Sb during the axial growth of InAs/InAs1-xSbx heterostructure nanowires causes a significant conformal lateral overgrowth on both segments, leading to the spontaneous formation of a core-shell structure, with an Sb-rich shell. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
23
issue
9
publisher
IOP Publishing
external identifiers
  • wos:000300605600017
  • scopus:84857418039
ISSN
0957-4484
DOI
10.1088/0957-4484/23/9/095702
language
English
LU publication?
yes
id
6b2a2c1d-3a82-4ed9-b9c1-6e4a7792fb06 (old id 2390723)
date added to LUP
2012-03-29 14:05:53
date last changed
2017-10-22 03:27:24
@article{6b2a2c1d-3a82-4ed9-b9c1-6e4a7792fb06,
  abstract     = {III-V antimonide nanowires are among the most interesting semiconductors for transport physics, nanoelectronics and long-wavelength optoelectronic devices due to their optimal material properties. In order to investigate their complex crystal structure evolution, faceting and composition, we report a combined scanning electron microscopy (SEM), transmission electron microscopy (TEM), and scanning tunneling microscopy (STM) study of gold-nucleated ternary InAs/InAs1-xSbx nanowire heterostructures grown by molecular beam epitaxy. SEM showed the general morphology and faceting, TEM revealed the internal crystal structure and ternary compositions, while STM was successfully applied to characterize the oxide-free nanowire sidewalls, in terms of nanofaceting morphology, atomic structure and surface composition. The complementary use of these techniques allows for correlation of the morphological and structural properties of the nanowires with the amount of Sb incorporated during growth. The addition of even a minute amount of Sb to InAs changes the crystal structure from perfect wurtzite to perfect zinc blende, via intermediate stacking fault and pseudo-periodic twinning regimes. Moreover, the addition of Sb during the axial growth of InAs/InAs1-xSbx heterostructure nanowires causes a significant conformal lateral overgrowth on both segments, leading to the spontaneous formation of a core-shell structure, with an Sb-rich shell.},
  articleno    = {095702},
  author       = {Xu, Tao and Dick Thelander, Kimberly and Plissard, Sebastien and Nguyen, Thanh Hai and Makoudi, Younes and Berthe, Maxime and Nys, Jean-Philippe and Wallart, Xavier and Grandidier, Bruno and Caroff, Philippe},
  issn         = {0957-4484},
  language     = {eng},
  number       = {9},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques},
  url          = {http://dx.doi.org/10.1088/0957-4484/23/9/095702},
  volume       = {23},
  year         = {2012},
}