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Effects of lattice mismatch and bulk anisotropy on interband tunneling in broken-gap heterostructures

Zakharova, A; Yen, ST; Nilsson, Karin LU and Chao, Koung-An LU (2005) In Applied Physics Reviews 97(6).
Abstract
We have studied the effects of bulk anisotropy and the strain induced by lattice mismatch on the interband tunneling in broken-gap single-barrier InAs/AlSb/GaSb heterostructures and double-barrier InAs/AlSb/GaSb/InAs/AlSb/GaSb heterostructures. We have used the eight-band k.p model and the scattering matrix method, combined with the Burt envelope function theory, to calculate the interband transmission coefficients through the broken-gap heterostructures. We have found a noticeable anisotropy of the transmission coefficients when the magnitude of the in-plane wave vector increases to around 0.25 nm(-1). We have also found that the strain and the bulk anisotropy of quasiparticle dispersion produce additional peaks in the tunneling... (More)
We have studied the effects of bulk anisotropy and the strain induced by lattice mismatch on the interband tunneling in broken-gap single-barrier InAs/AlSb/GaSb heterostructures and double-barrier InAs/AlSb/GaSb/InAs/AlSb/GaSb heterostructures. We have used the eight-band k.p model and the scattering matrix method, combined with the Burt envelope function theory, to calculate the interband transmission coefficients through the broken-gap heterostructures. We have found a noticeable anisotropy of the transmission coefficients when the magnitude of the in-plane wave vector increases to around 0.25 nm(-1). We have also found that the strain and the bulk anisotropy of quasiparticle dispersion produce additional peaks in the tunneling probability. For the double-barrier resonant-tunneling structures we discover a large spin splitting of the resonant-tunneling peaks caused by the lack of inversion symmetry. A strong influence of the strain induced by lattice mismatch appears in the current-voltage characteristics of the studied broken-gap heterostructures. In InAs/AlSb/GaSb structures the interband tunneling processes into the heavy-hole states contribute mainly to the peak current density if the sample is grown on InAs, but if the sample is grown on GaSb the interband tunneling processes into the light-hole states become the main contribution to the peak current density. As a result, the structure grown on GaSb has a much larger peak current density. This phenomenon was observed experimentally. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Reviews
volume
97
issue
6
publisher
American Institute of Physics
external identifiers
  • wos:000227767700036
  • scopus:20444431878
ISSN
0021-8979
DOI
10.1063/1.1857058
language
English
LU publication?
yes
id
4557e89e-b146-47d5-9a0f-0d677ad1211d (old id 247974)
date added to LUP
2007-08-13 11:09:15
date last changed
2017-01-01 05:18:31
@article{4557e89e-b146-47d5-9a0f-0d677ad1211d,
  abstract     = {We have studied the effects of bulk anisotropy and the strain induced by lattice mismatch on the interband tunneling in broken-gap single-barrier InAs/AlSb/GaSb heterostructures and double-barrier InAs/AlSb/GaSb/InAs/AlSb/GaSb heterostructures. We have used the eight-band k.p model and the scattering matrix method, combined with the Burt envelope function theory, to calculate the interband transmission coefficients through the broken-gap heterostructures. We have found a noticeable anisotropy of the transmission coefficients when the magnitude of the in-plane wave vector increases to around 0.25 nm(-1). We have also found that the strain and the bulk anisotropy of quasiparticle dispersion produce additional peaks in the tunneling probability. For the double-barrier resonant-tunneling structures we discover a large spin splitting of the resonant-tunneling peaks caused by the lack of inversion symmetry. A strong influence of the strain induced by lattice mismatch appears in the current-voltage characteristics of the studied broken-gap heterostructures. In InAs/AlSb/GaSb structures the interband tunneling processes into the heavy-hole states contribute mainly to the peak current density if the sample is grown on InAs, but if the sample is grown on GaSb the interband tunneling processes into the light-hole states become the main contribution to the peak current density. As a result, the structure grown on GaSb has a much larger peak current density. This phenomenon was observed experimentally.},
  author       = {Zakharova, A and Yen, ST and Nilsson, Karin and Chao, Koung-An},
  issn         = {0021-8979},
  language     = {eng},
  number       = {6},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Reviews},
  title        = {Effects of lattice mismatch and bulk anisotropy on interband tunneling in broken-gap heterostructures},
  url          = {http://dx.doi.org/10.1063/1.1857058},
  volume       = {97},
  year         = {2005},
}