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Wafer-Scale Synthesis of Semiconducting SnO Monolayers from Interfacial Oxide Layers of Metallic Liquid Tin

Daeneke, Torben ; Atkin, Paul ; Orrell-Trigg, Rebecca ; Zavabeti, Ali ; Ahmed, Taimur ; Walia, Sumeet ; Liu, Maning LU orcid ; Tachibana, Yasuhiro ; Javaid, Maria and Greentree, Andrew D. , et al. (2017) In ACS Nano 11(11). p.10974-10983
Abstract

Atomically thin semiconductors are one of the fastest growing categories in materials science due to their promise to enable high-performance electronic and optical devices. Furthermore, a host of intriguing phenomena have been reported to occur when a semiconductor is confined within two dimensions. However, the synthesis of large area atomically thin materials remains as a significant technological challenge. Here we report a method that allows harvesting monolayer of semiconducting stannous oxide nanosheets (SnO) from the interfacial oxide layer of liquid tin. The method takes advantage of van der Waals forces occurring between the interfacial oxide layer and a suitable substrate that is brought into contact with the molten metal.... (More)

Atomically thin semiconductors are one of the fastest growing categories in materials science due to their promise to enable high-performance electronic and optical devices. Furthermore, a host of intriguing phenomena have been reported to occur when a semiconductor is confined within two dimensions. However, the synthesis of large area atomically thin materials remains as a significant technological challenge. Here we report a method that allows harvesting monolayer of semiconducting stannous oxide nanosheets (SnO) from the interfacial oxide layer of liquid tin. The method takes advantage of van der Waals forces occurring between the interfacial oxide layer and a suitable substrate that is brought into contact with the molten metal. Due to the liquid state of the metallic precursor, the surface oxide sheet can be delaminated with ease and on a large scale. The SnO monolayer is determined to feature p-type semiconducting behavior with a bandgap of ∼4.2 eV. Field effect transistors based on monolayer SnO are demonstrated. The synthetic technique is facile, scalable and holds promise for creating atomically thin semiconductors at wafer scale.

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publishing date
type
Contribution to journal
publication status
published
subject
keywords
liquid metal, p-type, SnO, stannous oxide, two-dimensional materials
in
ACS Nano
volume
11
issue
11
pages
10 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:85035338877
  • pmid:29045121
ISSN
1936-0851
DOI
10.1021/acsnano.7b04856
language
English
LU publication?
no
id
247e635e-8cb3-4ae0-9491-142990869100
date added to LUP
2023-08-24 12:39:36
date last changed
2024-06-16 09:18:09
@article{247e635e-8cb3-4ae0-9491-142990869100,
  abstract     = {{<p>Atomically thin semiconductors are one of the fastest growing categories in materials science due to their promise to enable high-performance electronic and optical devices. Furthermore, a host of intriguing phenomena have been reported to occur when a semiconductor is confined within two dimensions. However, the synthesis of large area atomically thin materials remains as a significant technological challenge. Here we report a method that allows harvesting monolayer of semiconducting stannous oxide nanosheets (SnO) from the interfacial oxide layer of liquid tin. The method takes advantage of van der Waals forces occurring between the interfacial oxide layer and a suitable substrate that is brought into contact with the molten metal. Due to the liquid state of the metallic precursor, the surface oxide sheet can be delaminated with ease and on a large scale. The SnO monolayer is determined to feature p-type semiconducting behavior with a bandgap of ∼4.2 eV. Field effect transistors based on monolayer SnO are demonstrated. The synthetic technique is facile, scalable and holds promise for creating atomically thin semiconductors at wafer scale.</p>}},
  author       = {{Daeneke, Torben and Atkin, Paul and Orrell-Trigg, Rebecca and Zavabeti, Ali and Ahmed, Taimur and Walia, Sumeet and Liu, Maning and Tachibana, Yasuhiro and Javaid, Maria and Greentree, Andrew D. and Russo, Salvy P. and Kaner, Richard B. and Kalantar-Zadeh, Kourosh}},
  issn         = {{1936-0851}},
  keywords     = {{liquid metal; p-type; SnO; stannous oxide; two-dimensional materials}},
  language     = {{eng}},
  month        = {{11}},
  number       = {{11}},
  pages        = {{10974--10983}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{ACS Nano}},
  title        = {{Wafer-Scale Synthesis of Semiconducting SnO Monolayers from Interfacial Oxide Layers of Metallic Liquid Tin}},
  url          = {{http://dx.doi.org/10.1021/acsnano.7b04856}},
  doi          = {{10.1021/acsnano.7b04856}},
  volume       = {{11}},
  year         = {{2017}},
}