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Gate-Defined Quantum Devices Realized in InGaAs/InP by Incorporating a High-kappa Layer as Gate Dielectric

Sun, Jie LU ; Larsson, Marcus LU and Xu, Hongqi LU (2011) 30th International Conference on the Physics of Semiconductors (ICPS-30) In Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors 1399. p.285-286
Abstract
Single and double quantum dot devices are realized in InGaAs/InP heterostructures by top gating technology with incorporated High-kappa HfO2 gate dielectric layers. At 300 mK, Coulomb blockade effects are observed in as-fabricated devices, and the charge states can be measured by the integrated quantum point contacts. The developed technology should stimulate the research on quantum devices made from materials to which the gating technology is often difficult to apply due to low Schottky barrier height.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Quantum dots, InGaAs/InP, Coulomb blockade, High-kappa
in
Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors
volume
1399
pages
285 - 286
publisher
American Institute of Physics
conference name
30th International Conference on the Physics of Semiconductors (ICPS-30)
external identifiers
  • wos:000301053000127
  • scopus:84862831501
ISSN
1551-7616
0094-243X
DOI
10.1063/1.3666365
language
English
LU publication?
yes
id
9245d6c0-04f8-45f0-9606-d3ff8d697922 (old id 2493687)
date added to LUP
2012-05-11 15:12:16
date last changed
2017-01-01 03:52:28
@inproceedings{9245d6c0-04f8-45f0-9606-d3ff8d697922,
  abstract     = {Single and double quantum dot devices are realized in InGaAs/InP heterostructures by top gating technology with incorporated High-kappa HfO2 gate dielectric layers. At 300 mK, Coulomb blockade effects are observed in as-fabricated devices, and the charge states can be measured by the integrated quantum point contacts. The developed technology should stimulate the research on quantum devices made from materials to which the gating technology is often difficult to apply due to low Schottky barrier height.},
  author       = {Sun, Jie and Larsson, Marcus and Xu, Hongqi},
  booktitle    = {Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors},
  issn         = {1551-7616},
  keyword      = {Quantum dots,InGaAs/InP,Coulomb blockade,High-kappa},
  language     = {eng},
  pages        = {285--286},
  publisher    = {American Institute of Physics},
  title        = {Gate-Defined Quantum Devices Realized in InGaAs/InP by Incorporating a High-kappa Layer as Gate Dielectric},
  url          = {http://dx.doi.org/10.1063/1.3666365},
  volume       = {1399},
  year         = {2011},
}