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Gate-Defined Quantum Devices Realized in InGaAs/InP by Incorporating a High-kappa Layer as Gate Dielectric

Sun, Jie LU ; Larsson, Marcus LU and Xu, Hongqi LU (2011) 30th International Conference on the Physics of Semiconductors (ICPS-30) 1399. p.285-286
Abstract
Single and double quantum dot devices are realized in InGaAs/InP heterostructures by top gating technology with incorporated High-kappa HfO2 gate dielectric layers. At 300 mK, Coulomb blockade effects are observed in as-fabricated devices, and the charge states can be measured by the integrated quantum point contacts. The developed technology should stimulate the research on quantum devices made from materials to which the gating technology is often difficult to apply due to low Schottky barrier height.
Please use this url to cite or link to this publication:
author
; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Quantum dots, InGaAs/InP, Coulomb blockade, High-kappa
host publication
Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors
volume
1399
pages
285 - 286
publisher
American Institute of Physics (AIP)
conference name
30th International Conference on the Physics of Semiconductors (ICPS-30)
conference location
Seoul, Korea, Republic of
conference dates
2010-07-25 - 2010-07-30
external identifiers
  • wos:000301053000127
  • scopus:84862831501
ISSN
0094-243X
1551-7616
DOI
10.1063/1.3666365
language
English
LU publication?
yes
id
9245d6c0-04f8-45f0-9606-d3ff8d697922 (old id 2493687)
date added to LUP
2016-04-01 10:45:28
date last changed
2021-02-17 07:20:55
@inproceedings{9245d6c0-04f8-45f0-9606-d3ff8d697922,
  abstract     = {Single and double quantum dot devices are realized in InGaAs/InP heterostructures by top gating technology with incorporated High-kappa HfO2 gate dielectric layers. At 300 mK, Coulomb blockade effects are observed in as-fabricated devices, and the charge states can be measured by the integrated quantum point contacts. The developed technology should stimulate the research on quantum devices made from materials to which the gating technology is often difficult to apply due to low Schottky barrier height.},
  author       = {Sun, Jie and Larsson, Marcus and Xu, Hongqi},
  booktitle    = {Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors},
  issn         = {0094-243X},
  language     = {eng},
  pages        = {285--286},
  publisher    = {American Institute of Physics (AIP)},
  title        = {Gate-Defined Quantum Devices Realized in InGaAs/InP by Incorporating a High-kappa Layer as Gate Dielectric},
  url          = {http://dx.doi.org/10.1063/1.3666365},
  doi          = {10.1063/1.3666365},
  volume       = {1399},
  year         = {2011},
}