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Resonators with integrated CMOS circuitry for mass sensing applications, fabricated by electron beam lithography

Ghatnekar-Nilsson, Sara LU ; Forsen, E; Abadal, G; Verd, J; Campabadal, F; Perez-Murano, F; Esteve, J; Barniol, N; Boisen, A and Montelius, Lars LU (2005) In Nanotechnology 16(1). p.98-102
Abstract
A resonator system has been fabricated directly on a pre-processed CMOS chip. The system is to be used for high sensitivity mass sensing applications in air and vacuum. The resonator system, corresponding of a cantilever and structures for electrostatic actuation and capacitive read-out, have been defined by electron beam lithography on top of a charge and radiation sensitive CMOS layer in predefined areas as a post-process step. This has been accomplished without affecting the electronic properties of the pre-processed CMOS circuits. The subsequent etching steps to fully release the cantilevers have been obtained without stiction of the cantilevers to the substrate. Cantilevers are driven at their mechanical resonance in a lateral mode,... (More)
A resonator system has been fabricated directly on a pre-processed CMOS chip. The system is to be used for high sensitivity mass sensing applications in air and vacuum. The resonator system, corresponding of a cantilever and structures for electrostatic actuation and capacitive read-out, have been defined by electron beam lithography on top of a charge and radiation sensitive CMOS layer in predefined areas as a post-process step. This has been accomplished without affecting the electronic properties of the pre-processed CMOS circuits. The subsequent etching steps to fully release the cantilevers have been obtained without stiction of the cantilevers to the substrate. Cantilevers are driven at their mechanical resonance in a lateral mode, and the frequency is monitored by capacitive read-out on the chip. CMOS integration enables signal detection directly on the chip, which radically decreases the parasitic capacitances. Consequently, low-noise electrical measurements with a very high mass sensitivity are obtained. Fabricated resonator systems were characterized to have resonance frequencies of approximately 1.49 MHz, which is in good agreement with a theoretical estimation of 1.41 MHz. The theoretical mass resolution, partial derivativem/partial derivativef, is approximately 17 ag Hz(-1) using a Young modulus value of 160 GPa. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
16
issue
1
pages
98 - 102
publisher
IOP Publishing
external identifiers
  • wos:000226763800021
  • scopus:19944427727
ISSN
0957-4484
DOI
10.1088/0957-4484/16/1/020
language
English
LU publication?
yes
id
0f718770-00f7-46e6-bf7c-5b10a5a4b605 (old id 254243)
date added to LUP
2007-08-23 14:23:17
date last changed
2017-01-01 04:35:34
@article{0f718770-00f7-46e6-bf7c-5b10a5a4b605,
  abstract     = {A resonator system has been fabricated directly on a pre-processed CMOS chip. The system is to be used for high sensitivity mass sensing applications in air and vacuum. The resonator system, corresponding of a cantilever and structures for electrostatic actuation and capacitive read-out, have been defined by electron beam lithography on top of a charge and radiation sensitive CMOS layer in predefined areas as a post-process step. This has been accomplished without affecting the electronic properties of the pre-processed CMOS circuits. The subsequent etching steps to fully release the cantilevers have been obtained without stiction of the cantilevers to the substrate. Cantilevers are driven at their mechanical resonance in a lateral mode, and the frequency is monitored by capacitive read-out on the chip. CMOS integration enables signal detection directly on the chip, which radically decreases the parasitic capacitances. Consequently, low-noise electrical measurements with a very high mass sensitivity are obtained. Fabricated resonator systems were characterized to have resonance frequencies of approximately 1.49 MHz, which is in good agreement with a theoretical estimation of 1.41 MHz. The theoretical mass resolution, partial derivativem/partial derivativef, is approximately 17 ag Hz(-1) using a Young modulus value of 160 GPa.},
  author       = {Ghatnekar-Nilsson, Sara and Forsen, E and Abadal, G and Verd, J and Campabadal, F and Perez-Murano, F and Esteve, J and Barniol, N and Boisen, A and Montelius, Lars},
  issn         = {0957-4484},
  language     = {eng},
  number       = {1},
  pages        = {98--102},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Resonators with integrated CMOS circuitry for mass sensing applications, fabricated by electron beam lithography},
  url          = {http://dx.doi.org/10.1088/0957-4484/16/1/020},
  volume       = {16},
  year         = {2005},
}