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11% efficiency 100GHz InP-based heterostructure barrier varactor quintupler

Bryllert, Tomas LU ; Olsen, A O; Vukusic, J; Emadi, T A; Ingvarson, M; Stake, J and Lippens, D (2005) In Electronics Letters 41(3). p.131-132
Abstract
A record conversion efficiency of 11.4% at 100 GHz using a heretostructure barrier varactor (HBV) quintuplet is demonstrated. The quintupler is based on a microstrip circuit mounted in a full-height crossed-Nvaveguide block. The nonlinear element consists of a planar HBV diode fabricated in InGaAs/InAlAs/AlAs epitaxial layers on an InP substrate.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Electronics Letters
volume
41
issue
3
pages
131 - 132
publisher
IEE
external identifiers
  • wos:000226976200016
  • scopus:14344253131
ISSN
1350-911X
DOI
10.1049/el:20057633
language
English
LU publication?
yes
id
9fef0320-ed80-4a6b-b3d7-df555947c3bd (old id 254550)
date added to LUP
2007-09-21 09:48:23
date last changed
2017-09-10 04:24:55
@article{9fef0320-ed80-4a6b-b3d7-df555947c3bd,
  abstract     = {A record conversion efficiency of 11.4% at 100 GHz using a heretostructure barrier varactor (HBV) quintuplet is demonstrated. The quintupler is based on a microstrip circuit mounted in a full-height crossed-Nvaveguide block. The nonlinear element consists of a planar HBV diode fabricated in InGaAs/InAlAs/AlAs epitaxial layers on an InP substrate.},
  author       = {Bryllert, Tomas and Olsen, A O and Vukusic, J and Emadi, T A and Ingvarson, M and Stake, J and Lippens, D},
  issn         = {1350-911X},
  language     = {eng},
  number       = {3},
  pages        = {131--132},
  publisher    = {IEE},
  series       = {Electronics Letters},
  title        = {11% efficiency 100GHz InP-based heterostructure barrier varactor quintupler},
  url          = {http://dx.doi.org/10.1049/el:20057633},
  volume       = {41},
  year         = {2005},
}