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Silicon intercalation into the graphene-SiC interface

Wang, F.; Shepperd, K.; Hicks, J.; Nevius, M. S.; Tinkey, H.; Tejeda, A.; Taleb-Ibrahimi, A.; Bertran, F.; Le Fevre, P. and Torrance, D. B., et al. (2012) In Physical Review B (Condensed Matter and Materials Physics) 85(16).
Abstract
In this work we use low-energy electron microscopy, x-ray photoemission electron microscopy, and x-ray photoelectron spectroscopy to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room temperature onto multilayer graphene films grown on the SiC(000 (1) over bar) rapidly diffuses to the graphene-SiC interface when heated to temperatures above 1020 degrees C. In a sequence of depositions, we have been able to intercalate similar to 6 ML of Si into the graphene-SiC interface.
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Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
85
issue
16
publisher
American Physical Society
external identifiers
  • wos:000303387600007
  • scopus:84860425785
ISSN
1098-0121
DOI
10.1103/PhysRevB.85.165449
language
English
LU publication?
yes
id
df3cf6e0-7c6a-43dc-9695-e3f1449e62c3 (old id 2563337)
date added to LUP
2012-05-30 13:29:57
date last changed
2017-04-30 12:37:44
@article{df3cf6e0-7c6a-43dc-9695-e3f1449e62c3,
  abstract     = {In this work we use low-energy electron microscopy, x-ray photoemission electron microscopy, and x-ray photoelectron spectroscopy to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room temperature onto multilayer graphene films grown on the SiC(000 (1) over bar) rapidly diffuses to the graphene-SiC interface when heated to temperatures above 1020 degrees C. In a sequence of depositions, we have been able to intercalate similar to 6 ML of Si into the graphene-SiC interface.},
  articleno    = {165449},
  author       = {Wang, F. and Shepperd, K. and Hicks, J. and Nevius, M. S. and Tinkey, H. and Tejeda, A. and Taleb-Ibrahimi, A. and Bertran, F. and Le Fevre, P. and Torrance, D. B. and First, P. N. and de Heer, W. A. and Zakharov, Alexei and Conrad, E. H.},
  issn         = {1098-0121},
  language     = {eng},
  number       = {16},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Silicon intercalation into the graphene-SiC interface},
  url          = {http://dx.doi.org/10.1103/PhysRevB.85.165449},
  volume       = {85},
  year         = {2012},
}