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Theory of a strained p-Ge resonant-state terahertz laser

Odnoblyudov, MA; Prokofiev, AA; Yassievich, I and Chao, Koung-An LU (2004) In Physical Review B (Condensed Matter and Materials Physics) 70(11).
Abstract
A theory of a strained p-Ge resonant-state THz laser is developed. A comprehensive study of the processes leading to the stimulated THz emission in strained p-Ge under an electric field applied is presented. The distribution functions of light and heavy holes are found. The scattering by optical and acoustic phonons, as well as resonant scattering by charged impurities are taken into account. The steady-state hole distribution functions are used to calculate the generation-recombination coefficients which enter into the system of rate equations for the localized states populations. The populations of localized and resonant acceptor states are found. The conditions for population inversion are investigated. The optical gain calculation is... (More)
A theory of a strained p-Ge resonant-state THz laser is developed. A comprehensive study of the processes leading to the stimulated THz emission in strained p-Ge under an electric field applied is presented. The distribution functions of light and heavy holes are found. The scattering by optical and acoustic phonons, as well as resonant scattering by charged impurities are taken into account. The steady-state hole distribution functions are used to calculate the generation-recombination coefficients which enter into the system of rate equations for the localized states populations. The populations of localized and resonant acceptor states are found. The conditions for population inversion are investigated. The optical gain calculation is carried out taking into account main optical transitions in the THz spectrum range. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
70
issue
11
publisher
American Physical Society
external identifiers
  • wos:000224209500042
  • scopus:19744382023
ISSN
1098-0121
DOI
10.1103/PhysRevB.70.115209
language
English
LU publication?
yes
id
7b6de1fb-9c5b-4c30-aa19-0b7e2d1808eb (old id 266164)
date added to LUP
2007-10-29 10:23:20
date last changed
2017-01-01 06:38:45
@article{7b6de1fb-9c5b-4c30-aa19-0b7e2d1808eb,
  abstract     = {A theory of a strained p-Ge resonant-state THz laser is developed. A comprehensive study of the processes leading to the stimulated THz emission in strained p-Ge under an electric field applied is presented. The distribution functions of light and heavy holes are found. The scattering by optical and acoustic phonons, as well as resonant scattering by charged impurities are taken into account. The steady-state hole distribution functions are used to calculate the generation-recombination coefficients which enter into the system of rate equations for the localized states populations. The populations of localized and resonant acceptor states are found. The conditions for population inversion are investigated. The optical gain calculation is carried out taking into account main optical transitions in the THz spectrum range.},
  articleno    = {115209},
  author       = {Odnoblyudov, MA and Prokofiev, AA and Yassievich, I and Chao, Koung-An},
  issn         = {1098-0121},
  language     = {eng},
  number       = {11},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Theory of a strained p-Ge resonant-state terahertz laser},
  url          = {http://dx.doi.org/10.1103/PhysRevB.70.115209},
  volume       = {70},
  year         = {2004},
}