Picosecond time-resolved x-ray refectivity of a laser-heated amorphous carbon film
(2011) In Applied Physics Letters 98(10).- Abstract
- We demonstrate thin film x-ray reflectivity measurements with picosecond time resolution. Amorphous carbon films with a thickness of 46 nm were excited with laser pulses characterized by 100 fs duration, a wavelength of 800 nm, and a fluence of 70 mJ/cm(2). The laser-induced stress caused a rapid expansion of the thin film followed by a relaxation of the film thickness as heat diffused into the silicon substrate. We were able to measure changes in film thickness as small as 0.2 nm. The relaxation dynamics are consistent with a model which accounts for carrier-enhanced substrate heat diffusivity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3562967]
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1936354
- author
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 98
- issue
- 10
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000288277200022
- scopus:79952662145
- ISSN
- 0003-6951
- DOI
- 10.1063/1.3562967
- language
- English
- LU publication?
- yes
- id
- 26c3f8b1-7bfb-45dc-820d-ac3fcc201dec (old id 1936354)
- date added to LUP
- 2016-04-01 10:28:11
- date last changed
- 2022-04-27 22:25:16
@article{26c3f8b1-7bfb-45dc-820d-ac3fcc201dec, abstract = {{We demonstrate thin film x-ray reflectivity measurements with picosecond time resolution. Amorphous carbon films with a thickness of 46 nm were excited with laser pulses characterized by 100 fs duration, a wavelength of 800 nm, and a fluence of 70 mJ/cm(2). The laser-induced stress caused a rapid expansion of the thin film followed by a relaxation of the film thickness as heat diffused into the silicon substrate. We were able to measure changes in film thickness as small as 0.2 nm. The relaxation dynamics are consistent with a model which accounts for carrier-enhanced substrate heat diffusivity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3562967]}}, author = {{Nüske, Ralf and Jurgilaitis, Andrius and Enquist, H. and Farahani, S. Dastjani and Gaudin, J. and Guerin, L. and Harb, Maher and von Korff, C. and Stoermer, M. and Wulff, M. and Larsson, Jörgen}}, issn = {{0003-6951}}, language = {{eng}}, number = {{10}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Picosecond time-resolved x-ray refectivity of a laser-heated amorphous carbon film}}, url = {{http://dx.doi.org/10.1063/1.3562967}}, doi = {{10.1063/1.3562967}}, volume = {{98}}, year = {{2011}}, }