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Flat-Band Electronic Structure and Interlayer Spacing Influence in Rhombohedral Four-Layer Graphene

Wang, Weimin ; Shi, Yuchen ; Zakharov, Alexei A. LU ; Syväjärvi, Mikael ; Yakimova, Rositsa ; Uhrberg, Roger I.G. and Sun, Jianwu (2018) In Nano Letters 18(9). p.5862-5866
Abstract

The stacking order of multilayer graphene significantly influences its electronic properties. The rhombohedral stacking sequence is predicted to introduce a flat band, which has high density of states and the enhanced Coulomb interaction between charge carriers, thus possibly resulting in superconductivity, fractional quantum Hall effect, and many other exotic phases of matter. In this work, we comprehensively study the effect of the stacking sequence and interlayer spacing on the electronic structure of four-layer graphene, which was grown on a high crystalline quality 3C-SiC(111) crystal. The number of graphene layers and coverage were determined by low energy electron microscopy. First-principles density functional theory... (More)

The stacking order of multilayer graphene significantly influences its electronic properties. The rhombohedral stacking sequence is predicted to introduce a flat band, which has high density of states and the enhanced Coulomb interaction between charge carriers, thus possibly resulting in superconductivity, fractional quantum Hall effect, and many other exotic phases of matter. In this work, we comprehensively study the effect of the stacking sequence and interlayer spacing on the electronic structure of four-layer graphene, which was grown on a high crystalline quality 3C-SiC(111) crystal. The number of graphene layers and coverage were determined by low energy electron microscopy. First-principles density functional theory calculations show distinctively different band structures for ABAB (Bernal), ABCA (rhombohedral), and ABCB (turbostratic) stacking sequences. By comparing with angle-resolved photoelectron spectroscopy data, we can verify the existence of a rhombohedral stacking sequence and a nearly dispersionless electronic band (flat band) near the Fermi level. Moreover, we find that the momentum width, bandgap, and curvature of the flat-band region can be tuned by the interlayer spacing, which plays an important role in superconductivity and many other exotic phases of matter.

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author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
flat-band, Graphene, interlayer spacing, rhombohedral stacking, superconductor
in
Nano Letters
volume
18
issue
9
pages
5 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • pmid:30136852
  • scopus:85052867510
ISSN
1530-6984
DOI
10.1021/acs.nanolett.8b02530
language
English
LU publication?
yes
id
2711dbca-652e-4553-92a4-3ec0405dd2de
date added to LUP
2018-10-11 10:53:07
date last changed
2024-04-01 12:39:47
@article{2711dbca-652e-4553-92a4-3ec0405dd2de,
  abstract     = {{<p>The stacking order of multilayer graphene significantly influences its electronic properties. The rhombohedral stacking sequence is predicted to introduce a flat band, which has high density of states and the enhanced Coulomb interaction between charge carriers, thus possibly resulting in superconductivity, fractional quantum Hall effect, and many other exotic phases of matter. In this work, we comprehensively study the effect of the stacking sequence and interlayer spacing on the electronic structure of four-layer graphene, which was grown on a high crystalline quality 3C-SiC(111) crystal. The number of graphene layers and coverage were determined by low energy electron microscopy. First-principles density functional theory calculations show distinctively different band structures for ABAB (Bernal), ABCA (rhombohedral), and ABCB (turbostratic) stacking sequences. By comparing with angle-resolved photoelectron spectroscopy data, we can verify the existence of a rhombohedral stacking sequence and a nearly dispersionless electronic band (flat band) near the Fermi level. Moreover, we find that the momentum width, bandgap, and curvature of the flat-band region can be tuned by the interlayer spacing, which plays an important role in superconductivity and many other exotic phases of matter.</p>}},
  author       = {{Wang, Weimin and Shi, Yuchen and Zakharov, Alexei A. and Syväjärvi, Mikael and Yakimova, Rositsa and Uhrberg, Roger I.G. and Sun, Jianwu}},
  issn         = {{1530-6984}},
  keywords     = {{flat-band; Graphene; interlayer spacing; rhombohedral stacking; superconductor}},
  language     = {{eng}},
  number       = {{9}},
  pages        = {{5862--5866}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Nano Letters}},
  title        = {{Flat-Band Electronic Structure and Interlayer Spacing Influence in Rhombohedral Four-Layer Graphene}},
  url          = {{http://dx.doi.org/10.1021/acs.nanolett.8b02530}},
  doi          = {{10.1021/acs.nanolett.8b02530}},
  volume       = {{18}},
  year         = {{2018}},
}