Performance evaluation of N-well/P-sub photodiodes in 65nm CMOS process
Ahmad, Waqas LU ; Törmänen, Markus LU
and Sjöland, Henrik
LU
(2013)
6th IEEE/International Conference on Advanced Infocomm Technology (ICAIT)
p.135-136
- Abstract
- This work explores the n-well/p-substrate photodiode in a deep submicron CMOS process. A CMOS chip is designed featuring different structures of the photodiode. When characterized at a wavelength of 850nm DC responsivities between 0.12 and 0.16 A/W and 3-dB bandwidths of about 6 MHz with a roll-off of about 5.5dB/decade are measured. These investigations are very useful in designing the transimpedance amplifier and equalizer for a fully integrated optical receiver. According to the authors’ knowledge it is the first reported study on n-well/p-sub photodiodes in a 65nm CMOS technology.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3732446
- author
- Ahmad, Waqas
LU
; Törmänen, Markus
LU
and Sjöland, Henrik
LU
- organization
- publishing date
- 2013
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- photodiodes, optical communication, CMOS technology, optical receivers, photodetectors
- host publication
- [Host publication title missing]
- pages
- 2 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 6th IEEE/International Conference on Advanced Infocomm Technology (ICAIT)
- conference location
- Hsinchu, Taiwan
- conference dates
- 2013-07-06 - 2013-07-09
- external identifiers
-
- wos:000342413300061
- scopus:84888240683
- ISBN
- 978-1-4799-0464-8
- DOI
- 10.1109/ICAIT.2013.6621520
- project
- Distributed antenna systems for efficient wireless systems
- language
- English
- LU publication?
- yes
- id
- 271a8331-9e39-4661-b9d7-434aaac7dfff (old id 3732446)
- alternative location
- http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6621520
- date added to LUP
- 2016-04-04 11:33:19
- date last changed
- 2024-01-13 01:10:15
@inproceedings{271a8331-9e39-4661-b9d7-434aaac7dfff,
abstract = {{This work explores the n-well/p-substrate photodiode in a deep submicron CMOS process. A CMOS chip is designed featuring different structures of the photodiode. When characterized at a wavelength of 850nm DC responsivities between 0.12 and 0.16 A/W and 3-dB bandwidths of about 6 MHz with a roll-off of about 5.5dB/decade are measured. These investigations are very useful in designing the transimpedance amplifier and equalizer for a fully integrated optical receiver. According to the authors’ knowledge it is the first reported study on n-well/p-sub photodiodes in a 65nm CMOS technology.}},
author = {{Ahmad, Waqas and Törmänen, Markus and Sjöland, Henrik}},
booktitle = {{[Host publication title missing]}},
isbn = {{978-1-4799-0464-8}},
keywords = {{photodiodes; optical communication; CMOS technology; optical receivers; photodetectors}},
language = {{eng}},
pages = {{135--136}},
publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
title = {{Performance evaluation of N-well/P-sub photodiodes in 65nm CMOS process}},
url = {{http://dx.doi.org/10.1109/ICAIT.2013.6621520}},
doi = {{10.1109/ICAIT.2013.6621520}},
year = {{2013}},
}