Imaging the influence of oxides on the electrostatic potential of photovoltaic InP nanowires
(2021) In Nano Research 14(11). p.4087-4092- Abstract
Nanowires require surface passivation due to their inherent large surface to volume ratio. We investigate the effect of embedding InP nanowires in different oxides with respect to surface passivation by use of electron beam induced current measurements enabled by a nanoprobe based system inside a scanning electron microscope. The measurements reveal remote doping due to fixed charge carriers in the passivating POx/Al2O3 shell in contrast to results using SiOx. We used time-resolved photoluminescence to characterize the lifetime of charge carriers to evaluate the success of surface passivation. In addition, spatially resolved internal quantum efficiency simulations support and correlate the two... (More)
Nanowires require surface passivation due to their inherent large surface to volume ratio. We investigate the effect of embedding InP nanowires in different oxides with respect to surface passivation by use of electron beam induced current measurements enabled by a nanoprobe based system inside a scanning electron microscope. The measurements reveal remote doping due to fixed charge carriers in the passivating POx/Al2O3 shell in contrast to results using SiOx. We used time-resolved photoluminescence to characterize the lifetime of charge carriers to evaluate the success of surface passivation. In addition, spatially resolved internal quantum efficiency simulations support and correlate the two applied techniques. We find that atomic-layer deposited POx/Al2O3 has the potential to passivate the surface of InP nanowires, but at the cost of inducing a field-effect on the nanowires, altering their electrostatic potential profile. The results show the importance of using complementary techniques to correctly evaluate and interpret processing related effects for optimization of nanowire-based optoelectronic devices. [Figure not available: see fulltext.].
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- author
- Hrachowina, Lukas LU ; Zou, Xianshao LU ; Chen, Yang LU ; Zhang, Yuwei LU ; Barrigón, Enrique LU ; Yartsev, Arkady LU and Borgström, Magnus T. LU
- organization
- publishing date
- 2021-02-06
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- electron beam induced current (EBIC), field-effect, InP nanowires, MOVPE, oxides, time-resolved photoluminescence (TRPL)
- in
- Nano Research
- volume
- 14
- issue
- 11
- pages
- 4087 - 4092
- publisher
- Springer
- external identifiers
-
- scopus:85100564914
- ISSN
- 1998-0124
- DOI
- 10.1007/s12274-021-3344-9
- language
- English
- LU publication?
- yes
- additional info
- Publisher Copyright: © 2021, The Author(s). Copyright: Copyright 2021 Elsevier B.V., All rights reserved.
- id
- 279d47da-3058-4218-ae70-49e85c7d24fa
- date added to LUP
- 2021-02-24 09:41:13
- date last changed
- 2023-11-20 23:41:40
@article{279d47da-3058-4218-ae70-49e85c7d24fa, abstract = {{<p>Nanowires require surface passivation due to their inherent large surface to volume ratio. We investigate the effect of embedding InP nanowires in different oxides with respect to surface passivation by use of electron beam induced current measurements enabled by a nanoprobe based system inside a scanning electron microscope. The measurements reveal remote doping due to fixed charge carriers in the passivating PO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> shell in contrast to results using SiO<sub>x</sub>. We used time-resolved photoluminescence to characterize the lifetime of charge carriers to evaluate the success of surface passivation. In addition, spatially resolved internal quantum efficiency simulations support and correlate the two applied techniques. We find that atomic-layer deposited PO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> has the potential to passivate the surface of InP nanowires, but at the cost of inducing a field-effect on the nanowires, altering their electrostatic potential profile. The results show the importance of using complementary techniques to correctly evaluate and interpret processing related effects for optimization of nanowire-based optoelectronic devices. [Figure not available: see fulltext.].</p>}}, author = {{Hrachowina, Lukas and Zou, Xianshao and Chen, Yang and Zhang, Yuwei and Barrigón, Enrique and Yartsev, Arkady and Borgström, Magnus T.}}, issn = {{1998-0124}}, keywords = {{electron beam induced current (EBIC); field-effect; InP nanowires; MOVPE; oxides; time-resolved photoluminescence (TRPL)}}, language = {{eng}}, month = {{02}}, number = {{11}}, pages = {{4087--4092}}, publisher = {{Springer}}, series = {{Nano Research}}, title = {{Imaging the influence of oxides on the electrostatic potential of photovoltaic InP nanowires}}, url = {{http://dx.doi.org/10.1007/s12274-021-3344-9}}, doi = {{10.1007/s12274-021-3344-9}}, volume = {{14}}, year = {{2021}}, }