Advanced

Bloch gain in AlGaAs/GaAs semiconductor superlattices

Sekine, N; Shimada, Y; Hirakawa, K; Odnoblioudov, Maxim LU and Chao, Koung-An LU (2004) Eleventh International Conference on Modulated Semiconductor Structures In Proceedings of the Eleventh International Conference on Modulated Semiconductor Structures (Physica E: Low-dimensional Systems and Nanostructures) 21(2-4). p.858-862
Abstract
We have investigated terahertz (THz) emission due to dynamical electron transport in wide miniband GaAs/Al0.3Ga0.7As superlattices. By noting that the time-domain THz emission spectroscopy contains the information on the step response of the electron system to the bias electric field, the obtained THz spectra were compared with the high-frequency conductivities predicted for miniband transport. Excellent agreement between theory and experiment strongly supports that the THz gain due to Bloch oscillating electrons persists at least up to 1.7 THz. It was also found that Zener tunneling into the second miniband sets the high-frequency limit of the THz gain for the samples studied here. (C) 2003 Elsevier B.V. All rights reserved.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Bloch gain, Terahertz, superlattice
in
Proceedings of the Eleventh International Conference on Modulated Semiconductor Structures (Physica E: Low-dimensional Systems and Nanostructures)
volume
21
issue
2-4
pages
858 - 862
publisher
Elsevier
conference name
Eleventh International Conference on Modulated Semiconductor Structures
external identifiers
  • wos:000220873300146
  • scopus:1642310788
ISSN
1386-9477
DOI
10.1016/j.physe.2003.11.134
language
English
LU publication?
yes
id
993704ae-d4fc-4c41-b896-e5a948a8eb43 (old id 280643)
date added to LUP
2007-10-31 13:33:46
date last changed
2017-01-01 07:15:54
@inproceedings{993704ae-d4fc-4c41-b896-e5a948a8eb43,
  abstract     = {We have investigated terahertz (THz) emission due to dynamical electron transport in wide miniband GaAs/Al0.3Ga0.7As superlattices. By noting that the time-domain THz emission spectroscopy contains the information on the step response of the electron system to the bias electric field, the obtained THz spectra were compared with the high-frequency conductivities predicted for miniband transport. Excellent agreement between theory and experiment strongly supports that the THz gain due to Bloch oscillating electrons persists at least up to 1.7 THz. It was also found that Zener tunneling into the second miniband sets the high-frequency limit of the THz gain for the samples studied here. (C) 2003 Elsevier B.V. All rights reserved.},
  author       = {Sekine, N and Shimada, Y and Hirakawa, K and Odnoblioudov, Maxim and Chao, Koung-An},
  booktitle    = {Proceedings of the Eleventh International Conference on Modulated Semiconductor Structures (Physica E: Low-dimensional Systems and Nanostructures)},
  issn         = {1386-9477},
  keyword      = {Bloch gain,Terahertz,superlattice},
  language     = {eng},
  number       = {2-4},
  pages        = {858--862},
  publisher    = {Elsevier},
  title        = {Bloch gain in AlGaAs/GaAs semiconductor superlattices},
  url          = {http://dx.doi.org/10.1016/j.physe.2003.11.134},
  volume       = {21},
  year         = {2004},
}