Advanced

Single-crystalline Ge grown epitaxially on oxidized and reduced Ge/Si(100) islands

Zela, Vilma LU ; Gustafsson, Anders LU and Seifert, Werner LU (2004) In Journal of Crystal Growth 263(1-4). p.90-93
Abstract
In this paper, the Ge overgrowth of oxidized and reduced Ge/Si islands is studied. The islands were grown in a hotwall ultrahigh vacuum chemical vapour deposition reactor. The oxidation was performed in air at room temperature and the reduction in a hydrogen atmosphere at 600degreesC. After reduction, Ge was deposited at the same temperature. The results of the overgrowth show that the reduced native oxide on top of the islands transfers the epitaxial information from the Si substrate to the epitaxial layer, whereas no growth takes place outside the Ge islands. This makes it possible to use these islands as crystal seeds for epitaxial lateral overgrowth for growing Ge layers on top of Si substrates. (C) 2003 Elsevier B.V. All rights... (More)
In this paper, the Ge overgrowth of oxidized and reduced Ge/Si islands is studied. The islands were grown in a hotwall ultrahigh vacuum chemical vapour deposition reactor. The oxidation was performed in air at room temperature and the reduction in a hydrogen atmosphere at 600degreesC. After reduction, Ge was deposited at the same temperature. The results of the overgrowth show that the reduced native oxide on top of the islands transfers the epitaxial information from the Si substrate to the epitaxial layer, whereas no growth takes place outside the Ge islands. This makes it possible to use these islands as crystal seeds for epitaxial lateral overgrowth for growing Ge layers on top of Si substrates. (C) 2003 Elsevier B.V. All rights reserved. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
nanostructures, chemical vapor deposition processes, germanium silicon, alloys
in
Journal of Crystal Growth
volume
263
issue
1-4
pages
90 - 93
publisher
Elsevier
external identifiers
  • wos:000220184400015
  • scopus:1242286501
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2003.11.067
language
English
LU publication?
yes
id
f5605071-4237-4ce7-9f99-bea7b1bc318f (old id 284848)
date added to LUP
2007-11-07 09:05:01
date last changed
2017-01-01 07:23:54
@article{f5605071-4237-4ce7-9f99-bea7b1bc318f,
  abstract     = {In this paper, the Ge overgrowth of oxidized and reduced Ge/Si islands is studied. The islands were grown in a hotwall ultrahigh vacuum chemical vapour deposition reactor. The oxidation was performed in air at room temperature and the reduction in a hydrogen atmosphere at 600degreesC. After reduction, Ge was deposited at the same temperature. The results of the overgrowth show that the reduced native oxide on top of the islands transfers the epitaxial information from the Si substrate to the epitaxial layer, whereas no growth takes place outside the Ge islands. This makes it possible to use these islands as crystal seeds for epitaxial lateral overgrowth for growing Ge layers on top of Si substrates. (C) 2003 Elsevier B.V. All rights reserved.},
  author       = {Zela, Vilma and Gustafsson, Anders and Seifert, Werner},
  issn         = {0022-0248},
  keyword      = {nanostructures,chemical vapor deposition processes,germanium silicon,alloys},
  language     = {eng},
  number       = {1-4},
  pages        = {90--93},
  publisher    = {Elsevier},
  series       = {Journal of Crystal Growth},
  title        = {Single-crystalline Ge grown epitaxially on oxidized and reduced Ge/Si(100) islands},
  url          = {http://dx.doi.org/10.1016/j.jcrysgro.2003.11.067},
  volume       = {263},
  year         = {2004},
}